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MTZJT-775.6B

Description
DIODE ZENER 5.6V 500MW MSD
CategoryDiscrete semiconductor    diode   
File Size49KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

MTZJT-775.6B Overview

DIODE ZENER 5.6V 500MW MSD

MTZJT-775.6B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance40 Ω
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
JESD-609 codee3/e2
Maximum knee impedance500 Ω
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage5.6 V
Maximum reverse current5 µA
surface mountNO
technologyZENER
Terminal surfaceTIN/TIN COPPER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature10
Maximum voltage tolerance2.5%
Working test current5 mA
Base Number Matches1
MTZ J Series
Diodes
Zener diode
MTZ J Series
Applications
Constant voltage control
External dimensions
(Unit : mm)
CATHODE BAND (BLACK)
Features
1) Glass sealed envelope. (MSD)
2) High reliability.
29.0±1.0
2.7±0.3
29.0±1.0
φ
0.4±0.1
φ
1.8±0.2
Construction
Silicon epitaxial planer
ROHM : MSD
EIAJ :
JEDEC : DO-34
The Zener voltage value is stamped
on the body as a digital marking.
Absolute maximum ratings
(Ta=25°C)
Parameter
Power dissipation
Junction temperature
Storage temperature
Symbol
P
Tj
Tstg
Limits
500
175
−65
to
+175
Unit
mW
°C
°C
1/3
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