NJG1302V
MEDIUM POWER AMPLIFIER GaAs MMIC
nGENERAL
DESCRIPTION
NJG1302V is a GaAs MMIC designed mainly for the final
stage power amplifier of Japanese PHS handset, but suitable
digital wireless phone and wireless LAN.
This amplifier has wide variable gain capability of 20dB
dynamic range.
NJG1302V has input and output matching circuits internally
and features low voltage and high efficiency operation. The
output power of 21dBm is easily available with very low
distortion.
nPACKAGE
OUTLINE
NJG1302V
nFEATURES
lVoltage
gain under low distortion
lLow
voltage operation
lLow
current consumption
lHigh
gain
lLow
distortion (ACP)
lReduction
of Parasitic oscillation
lInput
and output internal matching circuit
lPackage
nPIN
CONFIGURATION
V Type
(Top View)
1
2
3
4
5
6
7
+3.0V typ.
195mA typ. @f=1.9GHz, P
OUT
=21dBm
32dB
-60dBc typ. @f=1.9GHz, P
OUT
=21dBm
SSOP14 (Package size: 5.0x6.4x1.25mm)
14
13
12
11
10
9
8
Pin connection
1. RFIN
2. GND
3. VGG1
4. GND
5. VCONT
6. GND
7. VGG2
8. RFOUT
9. GND
10. VDD2
11. GND
12. VDD1
13. GND
14. GND
-1-
NJG1302V
nABSOLUTE
MAXIMUM RATINGS
PARAMETER
Drain Voltage
Gate Voltage
Gain Control Voltage
Input Power
Power Dissipation
Operating Temperature
Storage Temperature
SYMBOL
V
DD1
, V
DD2
V
GG1
, V
GG2
V
CONT
P
IN
P
D
T
opr
T
stg
CONDITIONS
V
GG1
, V
GG2
=-0.9V
V
DD1
, V
DD2
=3.0V
V
DD1
, V
DD2
=3.0V
V
DD1
, V
DD2
=3.0V, V
GG1
, V
GG2
=-0.9V
At on PCB board
(T
a
=+25°C, Z
s
=Z
l
=50? )
RATINGS UNITS
6
-4
-4
3
600
-30~+85
-40~+150
V
V
V
dBm
mW
°C
°C
nELECTRICAL
CHARACTERISTICS
PARAMETER
Operating Frequency
Drain Voltage
Gate Voltage
Idle Current *1
Operating Current *1
Gate Current *2
Gain Control
Terminal Current
Gain Control Voltage
Small Signal Gain
Gain Flatness
Gain Control Range
Pout at 1dB
Compression point
Adjacent Channel
Leakage Power 1
Adjacent Channel
Leakage Power 2
Harmonics
Input VSWR
Load VSWR Tolerance
SYMBOL
freq
V
DD1, 2
V
GG1, 2
I
idle
I
DD
I
GG
I
CONT
V
CONT
Gain
G
flat
G
CONT
P
-1dB
P
acp
1
V
DD1, 2
=3.0V, I
idle
=180mA
V
DD1, 2
=3.0V, I
idle
=180mA
V
CONT
=-2~0V, V
DD1, 2
=3.0V
I
idle
=180mA
V
DD1, 2
=3.0V
V
DD1, 2
=3.0V, P
OUT
=21dBm
offset=600kHz,
P
IN
;
π/4
DQPSK
V
DD1, 2
=3.0V, P
OUT
=21dBm
offset=900kHz,
P
IN
;
π/4
DQPSK
V
DD1, 2
=3.0V, P
OUT
=21dBm
V
DD1, 2
=3.0V
V
DD1, 2
=3.0V, P
OUT
=21dBm
Load VSWR=4:1, All Phase
V
DD1, 2
=3.0V, I
idle
=180mA
V
DD1, 2
=3.0V, No RF Signal
V
DD1, 2
=3.0V, P
OUT
=21dBm
V
DD1, 2
=3.0V, P
OUT
=21dBm
V
DD1, 2
=3.0V, P
OUT
=21dBm
-2.0<V
CONT
<0.0V
CONDITIONS
V
DD1, 2
=3.0V
(T
a
=+25°C, Z
s
=Z
l
=50? )
MIN TYP MAX UNITS
1.89
2.9
-1.25
175
-
-150
-5
-2.0
29
0
18
22
-
-
3.0
-0.9
180
195
-70
-2
-
32
0.5
20
23
-60
1.92
5.0
-0.6
185
205
-
-
0
35
1.0
23
-
-55
GHz
V
V
mA
mA
uA
uA
V
dB
dB
dB
dBm
dBc
P
acp
2
P
SP
VSWR
i
-
-
-
-
-65
-35
-
-60
-30
2.2
dBc
dBc
Parasitic Oscillation for
Fundamental Signal Level
: <-60dBc
=
*1: VDD1 Terminal VDD2 Terminal Total Current
*2: VGG1 Terminal VGG2 Terminal Total Current
-2-
NJG1302V
nTYPICAL
CHARACTERISTICS
P
acp
vs. Operating Current vs. V
DD
(P
-50
out
Gain vs. Frequency vs. Control Voltage
(V
DD
=3.0V,
DD
=180mA, T =25 C)
I
a
40
V
CONT
=0V
o
=21dBm, V
cont
=0V, f=1.9GHz, T =25
o
C)
a
30
-55
20
-1.0V
10
-1.4V
0
(d
Bc)
P
P
acp
(dBc)
Gain (dB)
V
-60
DD
=2.9V
3.0V
3.3V
acp
-65
4.0V
5.0V
-10
0.0
1.0
2.0
3.0
-70
150
160
170
180
DD
190
(mA)
200
210
Frequency f (GHz)
Operating Current I
Output Power vs. Input Power
vs. Control Voltage
(V =3.0V, I
DD
idle
=180mA, f=1.9GHz, T =25 C)
a
o
26
V
24
(dBm)
22
20
-1.4V
CONT
=0V
-1V
-1.2V
Output Power P
out
18
16
14
12
-20
-15
-10
-5
0
Input Power P (dBm)
in
5
10
P
acp
-20
-30
-40
vs. Input Power vs. Control Voltage
(V
DD
=3.0V, I
idle
=180mA, f=1.9GHz, T =25 C)
a
o
V
CONT
=0V
-1V
P
acp
(dBc)
-50
-1.4V
-60
-70
-1.2V
-80
-90
-20
-15
-10
-5
0
Input Power P (dBm)
in
5
10
-3-
NJG1302V
nTYPICAL
CHARACTERISTICS
Gain, P
(V =3.0V, V
DD
acp
vs. Ambient Temperature
idle
cont
=0V, I
=180mA, P
out
=21dBm, f=1.9GHz)
-55
34
33
Gain (dB)
Gain
32
-60
(dBc)
Operatin Current I
DD
31
P
acp
30
-40
-65
-20
0
20
40
o
60
80
Ambient Temperature
a
T( C )
Operating Current, P
(V
DD
acp
vs. Control Voltage
o
in
a
Operating Current vs. Ambient Temperature
(V =3.0V, V
DD
cont
=3.0V, I
idle
=180mA, f=1.9GHz, P =-11dBm, T =25 C)
-20
=0V, I
idle
=180mA, P
out
=21dBm, f=1.9GHz)
250
190
(mA)
(mA)
185
DD
Operating Current I
I
DD
Operating Current I
P
acp
(dBc)
DD
200
-40
180
150
P
acp
-60
175
100
-2
-1.5
-1
-0.5
0
0.5
Control Voltage
CONT
(V)
V
-80
170
-40
-20
0
20
40
a
60
80
Ambient Temperature T(
o
C )
Gain vs PHS Band Frequency
vs. Control Voltage
(V
50
DD
Gain, Operating Current vs. V
(V
cont
=0V, I
idle
=180mA@V
33
=3.6V, P
DD
DD
o
=3.0V, I
DD
=180mA, T =25 C)
a
o
=21dBm, f=1.9GHz, T
a
=25 C)
out
240
40
32
I
DD
V
Gain (dB)
30
CONT
=0V
Gain (dB)
31
200
20
-1.0V
10
-1.4V
0
1.89
30
Gain
180
1.9
1.91
1.92
29
2.5
3
3.5
4
DD
Frequency f (GHz)
160
4.5
(V)
5
Drain Voltage V
-4-
(mA)
220
P
acp
NJG1302V
nTYPICAL
CHARACTERISTICS
Output Power,Total Current vs. Input Power
(V
25
DD2,3
Output Power, P.A.E. vs. Input Power
(V
DD2,3
=3V, V
CONT
=0V, f=1.9GHz, T =25 C)
a
350
300
25
o
=3V, V
CONT
=0V, f=1.9GHz, T =25 C )
a
100
o
Output Power
@I =80mA
idle
Output Power
@I =80mA
idle
(dBm)
Total Current (mA)
40mA
15
out
out
20mA
Total Current
250
@I
i d l e
=80mA
200
40mA
20mA
15
60
60mA
10
150
100
50
0
P.A.E.
@I =80mA
10
idle
40
40mA
5
60mA
40mA
5
20
20mA
0
-25
-20
-15
-10
-5
in
20mA
0
-25
-20
-15
-10
-5
in
0
0
5
10
0
5
10
Input Power P (dBm)
Input Power P (dBm)
|S | , |S | vs. Frequency
11
22
(V =3.0V, I
DD
DD
=180mA, V
cont
=0V, T =25 C)
a
o
20
10
|S
11
| , |S
22
| (dB)
0
|S
22
|
-10
|S
11
|
-20
-30
0
1
2
3
Frequency f (GHz)
All adjacent channel leakage power used in these evaluations are those of 600kHz offset from
fundamental wave at PHS operating condition(? /4QPSK moduration)
-5-
Power Added Efficiency (%)
20
60mA
(dBm)
20
60mA
80
Output Power P
Output Power P
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