1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Parts packaging code | DIE |
| package instruction | O-MEDB-N2 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum breakdown voltage | 13.2 V |
| Minimum breakdown voltage | 10.8 V |
| Breakdown voltage nominal value | 10 V |
| Maximum clamping voltage | 17.3 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | O-MEDB-N2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak reverse power dissipation | 1500 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | UNIDIRECTIONAL |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 9.72 V |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal location | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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