ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Description
AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo-
morphic High Electron Mobility Transistor (PHEMT), pack-
aged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12
GHz noise figures of 0.5 dB, or typical 4 GHz noise figures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance, reducing the sensitivity of noise performance to
variations in input impedance match, making the design of
broadband low noise amplifiers much easier. The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the first stage of extremely low noise
cascades. The repeatable performance and consistency
make it appropriate for use in Ku-band Direct Broad-cast
Satellite (DBS) Television systems, C-band Television Receive
Only (TVRO) LNAs, or other low noise amplifiers operating
in the 2-18 GHz frequency range.
Features
• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
ASSOCIATED GAIN (dB)
77 Package
1.2
NOISE FIGURE (dB)
25
20
Ga
15
10
NF
[1]
0.8
0.4
0
Pin Configuration
4
SOURCE
0
4
8
12
16
20
FREQUENCY (GHz)
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for V
DS
= 1.5 V, I
D
= 10 mA.
ATF-36077 fig 1
1
GATE
3
DRAIN
2
SOURCE
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
sivation assure rugged, reliable devices.
Note:
1. See Noise Parameter Table.
360
ATF-36077 Absolute Maximum Ratings
Symbol
V
DS
V
GS
V
GD
I
D
P
T
P
in max
T
ch
T
STG
Parameter
Drain – Source Voltage
Gate – Source Voltage
Gate-Drain Voltage
Drain Current
Total Power Dissipation
[3]
RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
dBm
°C
°C
Absolute
Maximum
[1]
+3
-3
-3.5
I
dss
180
+10
150
-65 to 150
Thermal Resistance
[2,3]
:
θ
ch-c
= 60°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Measured at P
diss
= 15 mW and T
ch
= 100°C.
3. Derate at 16.7 mW/°C for T
C
> 139°C.
ATF-36077 Electrical Specifications,
T
C
= 25°C, Z
O
= 50 Ω
,
V
ds
= 1.5 V, I
ds
= 10 mA, (unless otherwise noted).
Symbol
NF
G
A
g
m
I
dss
V
p 10 %
Parameters and Test Conditions
Noise Figure
[1]
Gain at NF
[1]
Transconductance
Saturated Drain Current
Pinch-off Voltage
f = 12.0 GHz
f = 12.0 GHz
V
DS
= 1.5 V, V
GS
= 0 V
V
DS
= 1.5 V, V
GS
= 0 V
V
DS
= 1.5 V, I
DS
= 10% of I
dss
Units
dB
dB
mS
mA
V
Min.
11.0
50
15
-1.0
Typ.
0.5
12.0
55
25
-0.35
Max.
0.6
45
-0.15
Note:
1. Measured in a fixed tuned environment with
Γ
source = 0.54 at 156°;
Γ
load = 0.48 at 167°.
ATF-36077 Characterization Information,
T
C
= 25°C, Z
O
= 50 Ω
,
V
ds
= 1.5 V, I
ds
= 10 mA, (unless otherwise noted).
Symbol
NF
G
A
S
12 off
P
1dB
V
GS 10 mA
Parameters and Test Conditions
Noise Figure (Tuned Circuit)
Gain at Noise Figure (Tuned Circuit)
Reverse Isolation
Output Power at 1 dB Gain Compression
Gate to Source Voltage for I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
f = 4 GHz
f = 12 GHz
f = 12 GHz, V
DS
= 1.5 V, V
GS
= -2 V
f = 4 GHz
f = 12 GHz
V
DS
= 1.5 V
Units
dB
dB
dB
dB
dB
dBm
dBm
V
Typ.
0.3
[2]
0.5
17
12
14
5
5
-0.2
Note:
2. See noise parameter table.
2
ATF-36077 Typical Scattering Parameters,
Common Source, Z
O
= 50 Ω, V
DS
= 1.5 V, I
D
= 10 mA
Freq.
S
11
S
21
GHz
Mag.
Ang.
dB
Mag.
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.97
0.94
0.90
0.86
0.82
0.78
0.75
0.72
0.69
0.66
0.63
0.61
0.60
0.58
0.57
0.56
0.57
-17
-33
-49
-65
-79
-93
-107
-120
-133
-146
-159
-172
175
161
147
131
114
97
14.00
13.81
13.53
13.17
12.78
12.39
12.00
11.64
11.32
11.04
10.81
10.63
10.50
10.41
10.36
10.34
10.34
10.35
5.010
4.904
4.745
4.556
4.357
4.162
3.981
3.820
3.682
3.566
3.473
3.401
3.349
3.315
3.296
3.289
3.289
3.291
Ang.
163
147
132
116
102
88
75
62
49
37
25
13
1
-12
-24
-37
-50
-64
dB
-36.08
-30.33
-27.25
-25.32
-24.04
-23.17
-22.58
-22.17
-21.90
-21.71
-21.57
-21.44
-21.32
-21.19
-21.04
-20.87
-20.69
-20.53
S
12
Mag.
0.016
0.030
0.043
0.054
0.063
0.069
0.074
0.078
0.080
0.082
0.083
0.085
0.086
0.087
0.089
0.091
0.092
0.094
Ang.
78
66
54
43
33
24
16
8
1
-6
-13
-19
-25
-32
-39
-47
-55
-65
Mag.
0.60
0.59
0.57
0.55
0.53
0.50
0.48
0.46
0.44
0.42
0.40
0.38
0.37
0.35
0.33
0.31
0.29
0.26
S
22
Ang.
-14
-28
-41
-54
-66
-78
-89
-99
-109
-119
-129
-139
-149
-160
-171
177
164
148
ATF-36077 Typical “Off ” Scattering Parameters,
Freq.
GHz
11.0
12.0
13.0
Common Source, Z
O
= 50 Ω, V
DS
= 1.5 V, I
D
= 0 mA, V
GS
= -2 V
Mag.
0.96
0.95
0.94
S
11
Ang.
-139
-152
-166
dB
-14.2
-14.0
-13.8
S
21
Mag.
0.19
0.20
0.20
Ang.
-43
-56
-69
dB
-14.2
-14.0
-13.8
S
21
Mag.
0.19
0.20
0.20
Ang.
-43
-56
-68
Mag.
0.97
0.97
0.96
S
22
Ang.
-125
-137
-149
3
ATF-36077 Typical Noise Parameters,
Common Source, Z
O
= 50 Ω, V
DS
= 1.5 V, I
D
= 10 mA
Freq.
F
min[1]
Γ
opt
GHz
dB
Mag.
Ang.
1
2
4
6
8
10
12
14
16
18
0.30
0.30
0.30
0.30
0.37
0.44
0.50
0.56
0.61
0.65
0.95
0.90
0.81
0.73
0.66
0.60
0.54
0.48
0.43
0.39
12
25
51
76
102
129
156
-174
-139
-100
R
n
/Z
o
-
0.40
0.17
0.13
0.09
0.05
0.03
0.02
0.05
0.09
GAIN (dB)
25
20
15
S21
10
5
0
MSG MAG
0.20
0
4
8
12
16
20
FREQUENCY (GHz)
Figure 2. Maximum Available Gain, Maximum Stable Gain and
Insertion Power Gain vs. Frequency. V
DS
= 1.5 V, I
D
= 10 mA.
ATF-36077 fig 2
Note:
1. The F
min
values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that
will be encountered when matching to the optimum reflection coefficient (Γ
opt
) at these
frequencies. The theoretical F
min
values for these frequencies are: 0.10 dB at 2 GHz, 0.20 dB
at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from associated s parameters,
packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz.
77 Package Dimensions
1.02
(0.040)
SOURCE
4
.51
(0.020)
1
GATE
Part Number Ordering Information
Part Number
ATF-36077-TRl
[2]
ATF-36077-STR
No. of Devices
1000
100
Container
7" Reel
strip
360
3
DRAIN
Note:
2. For more information, see “Tape and Reel Packaging for Semiconduc-
tor Devices,” in “Communications Components” Designer‘s Catalog.
SOURCE
2
1.78
(0.070)
1.22
(0.048)
1.75
(0.069)
.53
(0.021)
5.28
(0.208)
.10
(0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8726E
AV02-1222EN - April 29, 2008
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