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20CTH03STRR

Description
10 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB
CategoryDiscrete semiconductor    diode   
File Size208KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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20CTH03STRR Overview

10 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB

20CTH03STRR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionR-PSSO-G2
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
applicationHYPER FAST RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current120 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1
Bulletin PD-21070 07/05
20CTH03SPbF
20CTH03-1PbF
Hyperfast Rectifier
Features
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Lead-Free ("PbF" suffix)
t
rr
= 35ns max.
I
F(AV)
= 20Amp
V
R
= 300V
Description/ Applications
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ T
C
= 160°C Per Diode
Per Device
Non Repetitive Peak Surge Current @ T
J
= 25°C
Operating Junction and Storage Temperatures
Max
300
10
20
120
- 65 to 175
Units
V
A
°C
Case Styles
20CTH03SPbF
20CTH03-1PbF
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
D
2
PAK
www.irf.com
TO-262
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