EEWORLDEEWORLDEEWORLD

Part Number

Search

SIT9005ACU1D-18DB

Description
OSC MEMS
CategoryPassive components   
File Size333KB,9 Pages
ManufacturerSiTime
Environmental Compliance
Download Datasheet View All

SIT9005ACU1D-18DB Overview

OSC MEMS

SiT9005
1 to 141 MHz EMI Reduction Oscillator
Features
Applications
Spread spectrum for EMI reduction
Wide spread % option
Center spread: from ±0.125% to ±2%, ±0.125% step size
Down spread: -0.25% to -4% with -0.25% step size
Spread profile option: Triangular, Hershey-kiss
Programmable rise/fall time for EMI reduction: 8 options,
0.25 to 40 ns
Any frequency between 1 MHz and 141 MHz accurate to
6 decimal places
100% pin-to-pin drop-in replacement to quartz-based XO’s
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C.
Low power consumption of 4.0 mA typical at 1.8V
Pin1 modes: Standby, output enable, or spread disable
Fast startup time of 5 ms
LVCMOS output
Industry-standard packages
QFN: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5 mm
2
Contact
SiTime
for SOT23-5 (2.9 x 2.8 mm
2
)
RoHS and REACH compliant, Pb-free, Halogen-free
and Antimony-free
Surveillance camera
IP camera
Industrial motors
Flat panels
Multi function printers
PCI express
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated.
Typical values are at 25°C and 3.3V supply voltage.
Parameters
Output Frequency Range
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
f
1
141
MHz
Frequency Stability and Aging
Frequency Stability
F_stab
-20
-25
-50
Operating Temperature Range
T_use
-20
-40
Supply Voltage
Vdd
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
OE Disable Current
Idd
I_OD
Standby Current
I_std
1.8
2.5
2.8
3.0
3.3
5.6
5.0
5.0
4.6
2.1
0.4
+20
+25
+50
+70
+85
1.98
2.75
3.08
3.3
3.63
3.63
6.5
5.5
6.5
5.2
4.3
1.5
ppm
ppm
ppm
°C
°C
V
V
V
V
V
V
mA
mA
mA
mA
µA
µA
No load condition, f = 40 MHz, Vdd = 2.5V to 3.3V
No load condition, f = 40 MHz, Vdd = 1.8V
f = 40 MHz, Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z
state
f = 40 MHz, Vdd = 1.8V, OE = GND, Output in high-Z state
ST
= GND, Vdd = 2.5V to 3.3V, Output is weakly pulled down
ST
= GND, Vdd = 1.8V, Output is weakly pulled down
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage. Spread = Off.
Operating Temperature Range
Extended Commercial
Industrial
Supply Voltage and Current Consumption
Rev 1.0
September 25, 2017
www.sitime.com
Recruiting authors for embedded ARM development books
Recruiting authors of books on embedded ARM development. Our company has more than ten years of experience in publishing computer books, publishing hundreds of programming books every year, and has go...
爱自学 Recruitment
Low-pass filter waveform distortion problem
The input frequency is 1k square wave entering the low-pass filter, filtering out the waveform shown in the figure. The cutoff frequency of the low-pass filter is 1k. Why does this distortion occur?...
啊这--- Electronics Design Contest
Questions about PCB antenna
I would like to ask what network should be used for the antenna on the PCB circuit board?...
乐乐老了 stm32/stm8
Some of the boards returned by Samsung 6410 can be turned on and some cannot!
Hello everyone. At present, our company used to use 6400 boards that can be moved, but now we use 6410 in order to require the use of 667MHz. But it happened! Some boards can directly enter the OS, bu...
qianlongwuyong Embedded System
EEWORLD University Hall----Most people can't do a backflip, but Boston Dynamics robot Atlas can do it!
In addition to being able to open doors, move boxes, and get up after falling, the Boston Dynamics robot Atlas has recently learned a new skill! That is a backflip that not many people can do! In the ...
抛砖引玉 Robotics Development
Four doubts
[align=left][font=微软雅黑][size=4] 三极管是模拟型的有源器件,拿它做开关不是不行,你得要持续地施以足量的驱动才会持续地完全开通, 跟一般的开关用三极管相比,四层晶体管在开关方面所需的各项性能指标的优化更深更全,而线性度则更形忽略。 晶体三极管的原理,是势垒的控制,BJT的功率流穿越结面,势垒无法完全消隐,FET的功率流从结旁经过,没有饱和压降,但因沟道电阻受制于芯材,通...
安卓佳 Discrete Device

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1229  342  1528  2112  1578  25  7  31  43  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号