V20120S, VI20120S
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.50 V at I
F
= 5 A
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
K
TO-262AA
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
2
1
V20120S
PIN 1
PIN 2
CASE
3
1
VI20120S
PIN 1
PIN 2
K
2
3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variation
20 A
120 V
200 A
0.73 V
150 °C
TO-220AB, TO-262AA
Single
MECHANICAL DATA
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
V20120S
120
20
200
10 000
-40 to +150
VI20120S
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
Document Number: 89243
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20120S, VI20120S
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 5 A
I
F
= 10 A
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
V
R
= 90 V
SYMBOL
TYP.
0.57
0.71
0.99
0.50
0.61
0.73
10
6
-
14
MAX.
-
-
1.12
-
-
0.81
-
-
300
30
μA
mA
μA
mA
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
Reverse current
V
R
= 120 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
V20120S
2.0
VI20120S
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
TO-262AA
PREFERRED P/N
V20120S-M3/4W
VI20120S-M3/4W
UNIT WEIGHT (g)
1.88
1.45
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Revision: 09-Nov-17
Document Number: 89243
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20120S, VI20120S
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
25
Resistive or Inductive Load
100
Instantaneous Reverse Current (mA)
Average Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
20
15
1
T
A
= 100 °C
10
0.1
5
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
175
0.01
T
A
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
20
10
Transient Thermal Impedance (°C/W)
18
D = 0.5
D = 0.3
D = 0.8
Junction to Case
Average Power Loss (W)
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
D = t
p
/T
t
p
T
D = 0.2
D = 0.1
D = 1.0
1
0.1
0.01
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
T
A
= 150 °C
T
A
= 125 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Instantaneous Forward Current (A)
10
T
A
= 100 °C
Junction Capacitance (pF)
1
T
A
= 25 °C
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
Revision: 09-Nov-17
Document Number: 89243
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20120S, VI20120S
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
Revision: 09-Nov-17
Document Number: 89243
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000