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2W06

Description
2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size183KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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2W06 Overview

2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

2W06 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature125 °C
Maximum output current2 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
2W005 - 2W10
Single Phase 2.0 AMPS. Silicon Bridge Rectifiers
WOB
Features
UL Recognized File # E-96005
Surge overload ratings to 50 amperes peak
Ideal for printed circuit board
Reliable low cost construction technique
results in inexpensive product
High temperature soldering guaranteed:
260
o
C / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Mechanical Data
Case: Molded plastic
Lead: Pure tin plated, Lead free.
Polarity: As marked
Weight: 1.10 grams
Dimensions in inches and (millimeters)
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
o
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
= 50
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Symbol 2W
005
V
RRM
50
V
RMS
35
V
DC
50
I
(AV)
I
FSM
V
F
I
R
2W
01
100
70
100
2W
02
200
140
200
2W
04
400
280
400
2.0
50
1.1
2W
06
600
420
600
2W 2W
Units
10
08
800 1000
V
560 700
V
800 1000
V
A
A
V
uA
uA
o
10
500
Typical Thermal resistance (Note)
R
θJA
40
R
θJL
15
Operating Temperature Range
T
J
-55 to +125
Storage Temperature Range
T
STG
-55 to +150
Note: Thermal Resistance from Junction to Ambient and from Junction to Lead at
0.375” (9.5mm) Lead Length for P.C.B. Mounting.
C/W
o
o
C
C
Version: A06

2W06 Related Products

2W06 2W005 2W01 2W02 2W04 2W10 2W08
Description 2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V
Humidity sensitivity level 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Maximum repetitive peak reverse voltage 600 V 50 V 100 V 200 V 400 V 1000 V 800 V
surface mount NO NO NO NO NO NO NO
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