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RJK1051DPB-00#J5

Description
MOSFET N-CH 100V 15A LFPAK
CategoryDiscrete semiconductor    The transistor   
File Size100KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJK1051DPB-00#J5 Overview

MOSFET N-CH 100V 15A LFPAK

RJK1051DPB-00#J5 Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeLFPAK
package instruction,
Contacts5
Manufacturer packaging codePTZZ0005DA-A5
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Preliminary
Datasheet
RJK1051DPB
100V, 15A, 39m max.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 30 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
R07DS0082EJ0200
Rev.2.00
Apr 11, 2013
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Application
Switching Mode Power Supply
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AS Note 2
Pch
Note3
ch-C
Tch
Tstg
Note 2
Ratings
100
20
15
60
15
7.5
5.6
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive ( 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(V
GS(off)
) which characteristics has been improved.
R07DS0082EJ0200 Rev.2.00
Apr 11, 2013
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