FFSH1665ADN-F155
Silicon Carbide Schottky
Diode
650 V, 16 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
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•
•
•
•
•
•
Max Junction Temperature 175°C
Avalanche Rated 49 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Schottky Diode
Applications
•
General Purpose
•
SMPS, Solar Inverter, UPS
•
Power Switching Circuits
TO−247−3LD
CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K
FFSH
1665ADN
$Y
&Z
&3
&K
FFSH1665ADN
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
April, 2018
−
Rev. 1
1
Publication Order Number:
FFSH1665ADN−F155/D
FFSH1665ADN−F155
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
E
AS
I
F
I
F, Max
I
F,SM
I
F,RM
Ptot
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
Continuous Rectified Forward Current @ T
C
< 150°C
Continuous Rectified Forward Current @ T
C
< 135°C
Non-Repetitive Peak Forward Surge Current
T
C
= 25°C, 10
ms
T
C
= 150°C, 10
ms
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t
p
= 8.3 ms
Half-Sine Pulse, t
p
= 8.3 ms
T
C
= 25°C
T
C
= 150°C
T
J
, T
STG
Operating and Storage Temperature Range
(Note 1)
Parameter
Value
650
49
8*/16**
11*/22**
750
730
49
34
77
13
−55
to +175
A
A
A
A
W
W
°C
Unit
V
mJ
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E
AS
of 64 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 14 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
R
qJC
NOTE:
Parameter
Thermal Resistance, Junction to Case, Max
Value
1.96*/0.95**
Unit
°C/W
* Per Leg, ** Per Device
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Symbol
V
F
Parameter
Forward Voltage
Test Condition
I
F
= 8 A, T
C
= 25°C
I
F
= 8 A, T
C
= 125°C
I
F
= 8 A, T
C
= 175°C
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C
V
R
= 650 V, T
C
= 125°C
V
R
= 650 V, T
C
= 175°C
Q
C
C
Total Capacitive Charge
Total Capacitance
V = 400 V
V
R
= 1 V, f = 100 kHz
V
R
= 200 V, f = 100 kHz
V
R
= 400 V, f = 100 kHz
Min
−
−
−
−
−
−
−
−
−
−
Typ
1.5
1.6
1.72
−
−
−
27
463
48
38
Max
1.75
2.0
2.4
200
400
600
−
−
−
−
nC
pF
mA
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FFSH1665ADN−F155
Top Marking
FFSH1665ADN
Package
TO−247−3LD
Shipping
30 Units
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2
FFSH1665ADN−F155
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
16
T
J
=
−55
o
C
I
F
, FORWARD CURRENT (A)
10
T
J
= 175
o
C
T
J
= 25
o
C
−5
I
R
, REVERSE CURRENT (A)
12
T
J
= 125
o
C
T
J
= 75
o
C
10
−6
8
10
−7
TJ
= 175 oC
TJ = 75
oC
TJ = 125
oC
4
10
−8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
−9
TJ = 25
oC
TJ =
−55
oC
200
300
400
500
600 650
Figure 1. Forward Characteristics
100
I
F
, PEAK FORWARD CURRENT (A)
80
D = 0.1
VF, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 2. Reverse Characteristics
80
P
TOT
, POWER DISSIPATION (W)
60
60
D = 0.2
D = 0.3
40
40
20
D = 0.5
20
D = 0.7
D=1
0
25
50
75
100
125
o
150
175
0
25
50
75
100
125
o
150
175
T
C
, CASE TEMPERATURE
(
C
)
T
C
, CASE TEMPERATURE
(
C
)
Figure 3. Current Derating
Figure 4. Power Derating
40
Q
C
, CAPACITIVE CHARGE (nC)
1000
20
CAPACITANCE (pF)
0
100
200
300
400
500
600650
30
100
10
0
10
0.1
1
10
100
650
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSH1665ADN−F155
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
10
E
C
, CAPACITIVE ENERGY (
m
J)
8
6
4
2
0
0
100
200
300
400
500
600650
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
0.2
0.1
P
DM
0.01
0.05
0.02
0.01
0.1
NOTES:
t
1
t
2
0.001
SINGLE PULSE
10
−5
0.0005
−6
10
Z
qJC
(t) = r(t) x R
qJC
R
qJC
= 1.96
o
C/W
Peak T
J
= P
DM
x Z
qJC
(t) + T
C
Duty Cycle, D = t
1
/ t
2
10
−4
10
−3
10
−2
10
−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1
W
V
DD
= 50 V
EAVL = 1/2LI2 [V
R(AVL)
/ (V
R(AVL)
−
V
DD
)]
Q1 = IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
DUT
R
+
V
DD
V
DD
−
I V
V
AVL
Q1
I
L
I
L
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE O
DATE 31 OCT 2016
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
98AON13853G
ON SEMICONDUCTOR STANDARD
http://onsemi.com
1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 1 OF
XXX
2
©
Semiconductor Components Industries, LLC, 2002
October,
DESCRIPTION:
2002 − Rev. 0
TO−247−3LD
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