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SM5S26A-E3/2D

Description
TVS DIODE 26V 42.1V DO218AB
CategoryDiscrete semiconductor    diode   
File Size84KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SM5S26A-E3/2D Overview

TVS DIODE 26V 42.1V DO218AB

SM5S26A-E3/2D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeDO-218
package instructionR-PSSO-C1
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Maximum breakdown voltage31.9 V
Minimum breakdown voltage28.9 V
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-218AB
JESD-30 codeR-PSSO-C1
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3600 W
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage26 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationSINGLE
Maximum time at peak reflow temperature40
SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3600 W
2800 W
5W
500 A
175 °C
DO-218AB
PRIMARY CHARACTERISTICS
V
WM
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
I
FSM
T
J
max.
10 V to 36 V
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
with 10/1000 μs waveform
Peak pulse power dissipation
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse at T = 25 °C
A
P
PPM
P
D
I
PPM (1)
I
FSM
T
J
, T
STG
SYMBOL
VALUE
3600
W
2800
5.0
See next table
500
- 55 to + 175
W
A
A
°C
UNIT
Revision: 14-Sep-11
Document Number: 88382
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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