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TSF30U45C C0G

Description
DIODE ARRAY SCHOTT 45V ITO220AB
Categorysemiconductor    Discrete semiconductor   
File Size212KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

TSF30U45C C0G Overview

DIODE ARRAY SCHOTT 45V ITO220AB

TSF30U45C C0G Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)45V
Current - average rectification (Io) (per diode)15A
Voltage at different If - Forward (Vf500mV @ 15A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current500µA @ 45V
Operating Temperature - Junction-55°C ~ 150°C
Installation typeThrough hole
Package/casingTO-220-3 fully encapsulated, isolation tab
Supplier device packagingITO-220AB
TSF30U45C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
V
AC
Min.
Breakdown voltage ( I
R
=1.0mA )
Instantaneous forward voltage per diode
( Note1 )
Instantaneous reverse current per diode
at rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
I
F
= 15A
I
F
= 15A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
BR
V
F
I
R
R
θJC
T
J
T
STG
45
-
-
-
-
TSF30U45C
45
30
15
250
10000
1500
TYP.
-
0.450
0.415
150
50
4
- 55 to +150
- 55 to +150
MAX.
-
0.50
0.45
500
100
V
V
μA
mA
°C/W
°C
°C
UNIT
V
A
A
V/μs
V
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Isolation voltage from terminal to heatsink t = 1 min
Document Number: DS_D1412008
Version: F14
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