Advance Technical Information
X3-Class HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN170N25X3
D
V
DSS
I
D25
=
=
R
DS(on)
250V
146A
7.4m
G
S
S
miniBLOC, SOT-227
E153432
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
dv/dt
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
Maximum Ratings
250
250
20
30
146
400
85
2.3
390
20
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
W
V/ns
C
C
C
V~
V~
Nm/lb.in
Nm/lb.in
g
G
S
D
G = Gate
S = Source
D = Drain
Features
50/60 Hz, RMS
I
ISOL
1mA
t = 1 minute
t = 1 second
2500
3000
1.5/13
1.3/11.5
30
Mounting Torque
Terminal Connection Torque
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500
V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(on)
Advantages
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 85A, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
250
2.5
4.5
100
V
V
nA
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power
Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
10
A
1 mA
6.1
7.4 m
© 2017 IXYS CORPORATION, All Rights Reserved
DS100825A(4/17)
IXFN170N25X3
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
R
Gi
C
iss
C
oss
C
rss
Effective Output Capacitance
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.05
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 85A
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
800
3280
18
10
62
7
190
55
45
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.32
C/W
C/W
(M4 screws (4x) supplied)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Gate Input Resistance
Characteristic Values
Min.
Typ.
Max
66
110
1.3
13.5
2.3
1.6
S
nF
nF
pF
SOT-227B (IXFN) Outline
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 85A
R
G
= 5(External)
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
I
F
= 85A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
135
980
13
Characteristic Values
Min.
Typ.
Max.
170
680
1.4
A
A
V
ns
nC
A
Note 1.
Pulse test, t
300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN170N25X3
Fig. 1. Output Characteristics @ T
J
= 25 C
180
160
140
120
V
GS
= 10V
8V
7V
800
V
GS
= 10V
700
600
9V
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
I
D
- Amperes
100
80
60
40
20
6V
I
D
- Amperes
500
400
300
200
8V
7V
5V
6V
100
4V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
5V
15
20
25
30
0
V
DS
- Volts
o
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
180
160
140
120
V
GS
= 10V
8V
7V
2.4
2.8
Fig. 4. R
DS(on)
Normalized to I
D
= 85A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.0
I
D
= 170A
1.6
I
D
= 85A
1.2
I
D
- Amperes
100
80
60
40
6V
5V
0.8
20
0
0
0.5
1
1.5
2
2.5
3
4V
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Fig. 5. R
DS(on)
Normalized to I
D
= 85A Value vs.
Drain Current
V
GS
= 10V
1.3
1.2
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
BV
DSS
/ V
GS(th)
- Normalized
T
J
= 125 C
o
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
BV
DSS
R
DS(on)
- Normalized
T
J
= 25 C
o
V
GS(th)
BV
DSS
-60
-40
-20
0
20
40
60
80
100
120
140
160
100
200
300
400
500
600
700
800
I
D
- Amperes
T
J
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXFN170N25X3
Fig. 7. Maximum Drain Current vs. Case Temperature
160
140
200
120
250
Fig. 8. Input Admittance
I
D
- Amperes
I
D
- Amperes
100
80
60
40
150
100
T
J
= 125 C
25 C
o
o
- 40 C
o
50
20
0
-50
-25
0
25
50
75
100
125
150
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
T
C
- Degrees Centigrade
V
GS
- Volts
Fig. 9. Transconductance
240
T
J
= - 40 C
200
500
o
Fig. 10. Forward Voltage Drop of Intrinsic Diode
600
g
f s
- Siemens
160
25 C
o
400
120
125 C
o
I
S
- Amperes
300
80
200
T
J
= 25 C
40
100
T
J
= 125 C
o
o
0
0
40
80
120
160
200
240
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
- Amperes
V
SD
- Volts
Fig. 11. Gate Charge
10
9
8
7
V
DS
= 125V
I
D
= 85A
100,000
Fig. 12. Capacitance
Capacitance - PicoFarads
I
G
= 10mA
10,000
Ciss
V
GS
- Volts
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
180
200
1,000
Coss
100
Crss
10
f
= 1 MHz
1
1
10
100
1,000
Q
G
- NanoCoulombs
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN170N25X3
Fig. 13. Output Capacitance Stored Energy
24
1000
R
DS(
on
)
Limit
20
100
25μs
Fig. 14. Forward-Bias Safe Operating Area
E
OSS
- MicroJoules
16
12
I
D
- Amperes
100μs
10
8
1ms
1
T
J
= 150 C
T
C
= 25 C
Single Pulse
0.1
0
40
80
120
160
200
240
1
10
100
1,000
o
o
4
10ms
DC
0
V
DS
- Volts
V
DS
- Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
Z
(th)JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_170N25X3(28-S301) 4-24-17
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