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BLP05H675XRGY

Description
RF FET LDMOS 135V 27DB SOT12242
Categorysemiconductor    Discrete semiconductor   
File Size1MB,16 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
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BLP05H675XRGY Overview

RF FET LDMOS 135V 27DB SOT12242

BLP05H675XRGY Parametric

Parameter NameAttribute value
Transistor typeLDMOS (dual), common source
frequency108MHz
Gain27dB
Voltage - Test50V
Rated current-
Noise Figure-
Current - Test20mA
Power - output75W
Voltage - Rated135V
Package/casingSOT-1224-2
Supplier device packaging4-HSOPF
BLP05H675XR; BLP05H675XRG
Power LDMOS transistor
Rev. 4 — 1 September 2016
Product data sheet
1. Product profile
1.1 General description
A 75 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
f
(MHz)
pulsed RF
108
V
DS
(V)
50
P
L
(W)
75
G
p
(dB)
27
D
(%)
75
Test signal
1.2 Features and benefits
Easy power control
Integrated double sided ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

BLP05H675XRGY Related Products

BLP05H675XRGY BLP05H675XRY
Description RF FET LDMOS 135V 27DB SOT12242 RF FET LDMOS 135V 27DB SOT12232
Transistor type LDMOS (dual), common source LDMOS (dual), common source
frequency 108MHz 108MHz
Gain 27dB 27dB
Voltage - Test 50V 50V
Current - Test 20mA 20mA
Power - output 75W 75W
Voltage - Rated 135V 135V
Package/casing SOT-1224-2 SOT-1223-2
Supplier device packaging 4-HSOPF 4-HSOPF
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