19-3931; Rev 4; 2/11
KIT
ATION
EVALU
E
BL
AVAILA
25V Span, 800mA Device Power Supply (DPS)
General Description
The MAX9959 provides all the key features of a device
power supply (DPS) common to automatic test equip-
ment (ATE) and other instrumentation. Its small size,
high level of integration, and superb flexibility make the
MAX9959 ideal and economical for multisite systems
requiring many device power supplies.
The MAX9959 has multiple input control voltages that
allow independent setting of both the output voltage,
and the maximum and minimum (smallest positive or
most negative) voltage or current. The MAX9959 is a
voltage source when the load current is between the
two programmed limits, and transitions gracefully into a
precision current source/sink if a programmed current
limit is reached. The output features two independently
adjustable voltage clamps that limit both the negative
and positive output voltage values between levels
externally provided.
The MAX9959 can source voltages spanning 25V and
can source currents as high as ±800mA. The DPS can
support an external buffer for sourcing and sinking
higher currents. Multiple MAX9959s can be configured
in parallel to load-share, allowing higher output currents
with greater flexibility.
The MAX9959 features operation over a wide range of
loading conditions. Programmability allows optimizing
of settling time, over-/undershoot, and stability. Built-in,
configurable, range-change glitch-control circuits mini-
mize output glitches during range transitions.
The MAX9959 offers load regulation of 1mV at 800mA
load.
The MAX9959D features an internal 300kΩ sense
resistor (R
FS
), between RCOMF and SENSE. The
MAX9959F does not include this sense resistor. Both
devices are available in the 100-pin TQFP package with
an exposed pad on the top for heat removal.
o
25V Span Output Voltage
o
Programmable Current and Voltage Compliance
o
Programmable Current Ranges
±200µA
±2mA
±20mA
±800mA
o
Load Regulation of 1mV at 800mA
o
External Buffer Support for Higher Currents
o
Parallel Multiple Devices for Higher Currents
o
Programmable Gain Allows a Wide Range of DACs
o
Device-Under-Test (DUT) Ground Sense
o
Programmable Compensation for Wide Range
of Loads
o
Integrated Go/No-Go Comparators
o
IDDQ Test Mode
o
Range-Change Glitch Control
o
Compact (14mm x 14mm) Package
o
3-Wire Compatible Serial Interface
o
Thermal Warning Flag and Thermal Shutdown
Features
MAX9959
Ordering Information
PART
MAX9959DCCQ
MAX9959DCCQ+
MAX9959FCCQ+
TEMP RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
PIN-PACKAGE
100 TQFP-EPR-IDP
*
100 TQFP-EPR-IDP
*
100 TQFP-EPR-IDP
*
Applications
Memory Testers
VLSI Testers
System-On-a-Chip Testers
Industrial Systems
Structural Testers
+Denotes
a lead(Pb)-free/RoHS-compliant package.
*EPR
= Exposed pad. Inverted die pad.
Pin Configuration appears at end of data sheet.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
25V Span, 800mA Device Power Supply (DPS)
MAX9959
ABSOLUTE MAXIMUM RATINGS
V
CC
to V
EE
…...................................................................... +31V
V
CC
to AGND ...................................................................... +20V
V
EE
to AGND….................... .................................................-15V
V
L
to DGND .......................................................................... +6V
AGND to DGND.....................................................-0.5V to +0.5V
Digital Inputs ................................................-0.3V to (V
L
+ 0.3V)
All Other Pins ...................................(V
EE
- 0.3V) to (V
CC
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
100-Pin TQFP-EPR-IDP (derated at 166.7mW/°C
above +70°C)........................................................13.33W
Junction Temperature ..................................................... +150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) ................................ +300°C
Soldering Temperature (reflow)
Lead(Pb)-Free Packages.............................................+260°C
Packages Containing Lead(Pb)...................................+240°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +12V, V
EE
= -12V, V
L
= +3.3V, T
J
= +30°C to +100°C. Typical values are at T
J
= +30°C, unless otherwise specified.) (Notes 1, 2)
PARAMETER
VOLTAGE OUTPUT
DUT current below 10% of FSR current
DUT current = +800mA, range A (Note 2)
Output Voltage Range
V
DUT
DUT current = -800mA, range A (Note 2)
DUT current at full scale (I
DUT
= 200µA,
2mA, 20mA, or 200mA)
Output Offset
Output-Voltage Temperature
Coefficient
V
OS
V
OSTC
Gain = +1
Gain = +2
Voltage Gain Error
V
GE
Gain = +6
Gain = -1
Gain = -2
Gain = -6
Voltage-Gain Temperature
Coefficient
Linearity Error
Off-State Leakage Current
Force-to-Sense Resistor
DUT GROUND SENSE
Voltage Range
LOAD REGULATION (Note 6)
Voltage
ΔV
DUT
Range A, gain = +1, V
IN
= (V
CC
- 5V) to
(V
EE
+ 5V), ±800mA current load step
(Note 5)
±1
±7
mV
ΔV
DUTGND
V
DUTGSNS
- V
AGND
±500
±700
mV
V
GETC
Gain and offset errors calibrated out; I
OUT
=
0 for ranges A, C, and D; ±20mA for range
B; gain = +1 (Notes 3, 4, 5)
RCOMF = (V
CC
- 2.5V) to (V
EE
+ 2.5V)
“D” option only
-10
300
±5
V
IN
= 0V, I
OUT
= 0A (no load), gain = +1
±50
±1.25
±1.25
±1.25
±1.25
±1.25
±1.25
ppm/°C
%
V
EE
+ 2.5
0
-7
V
EE
+ 5
V
CC
- 2.5
+7
0
V
CC
- 5
±25
mV
µV/°C
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
LER
HIZF
LK
R
FS
±0.02
+10
%FSR
nA
kΩ
2
_______________________________________________________________________________________
25V Span, 800mA Device Power Supply (DPS)
DC ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +12V, V
EE
= -12V, V
L
= +3.3V, T
J
= +30°C to +100°C. Typical values are at T
J
= +30°C, unless otherwise specified.) (Notes 1, 2)
PARAMETER
CURRENT OUTPUT
Range D, R
D
= 5000Ω
Output Current Range
I
DUT
Range C, R
C
= 500Ω
Range B, R
B
= 50Ω
Range A, R
A
= 1.25Ω
Input Voltage Range
Corresponding to the Full-Scale
Force Current
Current-Sense-Amp Offset
Voltage Input
Output Current Offset
Force-Current Offset
Temperature Coefficient
Gain Error
Forced-Current Gain
Temperature Coefficient
IOSI = AGND
V
INI
V
IOSI
= V
AGND
+ 4V
V
IOSI
I
OS
I
OSTC
I
GE
I
GETC
Range D, I
OUT
= ±200µA
Output Over Current-Limit
Range (Note 4)
I
OCL
Range C, I
OUT
= ±2mA
Range B, I
OUT
= ±20mA
Range A, I
OUT
= ±800mA
Linearity Error
Rejection of Output Error Due to
Common-Mode Load Voltage
CURRENT MONITOR
Range D
Measured Current Range
I
DUTM
Range C
Range B
Range A
Current-Sense-Amp Voltage
Range
Current-Sense-Amp Offset
Voltage Input
Current-Sense-Amp Offset
Measured-Current Offset
Temperature Coefficient
Gain Error
V
ISENSE
V
IOSI
I
MOS
I
MOSTC
I
MGE
V
RCOMF
= 0V, I
OUT
= ±FSR
IOSI = AGND
V
IOSI
= V
AGND
+ 4V
Relative to AGND
V
RCOMF
= 0V (Note 4)
-4
0
-0.2
±0.1
±20
±1
±200
±2
±20
±800
+4
+8
+4.4
±0.5
V
V
%FSR
ppm/°C
%
mA
µA
I
LER
Gain, offset, and CMR errors calibrated
out; V
IOSI
= -0.2V and +4.4V; ranges B, C,
and D (Notes 4, 5, 7)
Range D, I
OUT
= 0, V
RCOMF
= (V
EE
+ 2.5V)
and (V
CC
- 2.5V), measured across R
D
0.001
±135
±135
±135
±125
V
RCOMF
= 0V, I
OUT
= ±FSR
±20
±147
±147
±147
±138
±158
±158
±158
±150
±0.02
%FSR
%FSR
Relative to AGND
V
RCOMF
= 0V (Note 4)
0
-0.2
±0.1
±20
±1.0
+8
+4.4
±0.5
V
%FSR
ppm/°C
%
ppm/°C
-4
±200
±2
±20
±800
+4
V
mA
µA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MAX9959
CMR
OER
0.005
%FSR/V
_______________________________________________________________________________________
3
25V Span, 800mA Device Power Supply (DPS)
MAX9959
DC ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +12V, V
EE
= -12V, V
L
= +3.3V, T
J
= +30°C to +100°C. Typical values are at T
J
= +30°C, unless otherwise specified.) (Notes 1, 2)
PARAMETER
Measured-Current Gain
Temperature Coefficient
Linearity Error
Rejection of Output Error Due to
Common-Mode Load Voltage
VOLTAGE MONITOR
Measured Output Voltage Range
Voltage-Sense-Amp Offset
Voltage Input
Voltage-Sense-Amp Offset
Measured Voltage Offset
Temperature Coefficient
Voltage-Sense-Amp Gain Error
Measured-Voltage Gain
Temperature Coefficient
Linearity Error
V
DUTM
V
IOSV
V
DUTMOS
V
DUTMOSTC
Gain = +1
V
DUTGE
Gain = +1/2
Gain = +1/6
V
DUTGETC
Gain and offset errors calibrated out,
V
IOSV
= -0.2V and +4.4V, I
OUT
= 0A, gain
= +1, range B (Note 4)
±10
Gain = +1, IOSV = AGND
Relative to AGND
Gain = +1
±10
±1
±1
±1
ppm/°C
%
V
EE
+ 2.5
-0.2
V
CC
- 2.5
+4.4
±25
V
V
mV
µV/°C
SYMBOL
I
MGETC
I
MLER
CMR
MOER
Gain, offset, and CMR errors calibrated out;
V
IOSI
= -0.2V and +4.4V, range B (Notes 4, 5)
Range D, I
OUT
= 0A, V
RCOMF
=
(V
EE
+ 2.5V) and (V
CC
- 2.5V)
0.001
CONDITIONS
MIN
TYP
±20
±0.02
0.005
MAX
UNITS
ppm/°C
%FSR
%FSR/
V
V
DUTLER
±0.02
%FSR
VOLTAGE/CURRENT CLAMPS (Note 8)
Input Control Voltage
Voltage Clamp Range (Note 9)
Voltage Clamp Gain
Voltage Clamp Accuracy
(Notes 2, 9)
Current Clamp Range
Current Clamp Gain
V
CLLO
,
V
CLHI
VC
RNG
VC
GAIN
VC
ERR
Range A to D, I
OUT
≤
10% of FSR
Range A to D, I
OUT
= ±FSR
(Note 10)
V
IOSI
±1.5 x
FSR
4
Range A, V
OUT
= ±FSR, I
OUT
= ±FSR
(Notes 2, 10)
Range B to D, V
OUT
= ±FSR, gain and
offset errors calibrated out (Note 10)
V
EE
+ 3.5
V
ITHHI
= V
ITHLO
= 0V
±0.15
%FSR
±0.05
DPS output current
≤
10% of FSR
DPS output current at FSR
V
EE
+ 2.3
V
EE
+ 2.5
V
EE
+ 5
+1
±200
±200
V
CC
- 2.3
V
CC
- 2.5
V
CC
- 5
V
V
V/V
mV
IC
RNG
IC
GAIN
V
V/FSR
Current Clamp Accuracy
IC
ERR
COMPARATOR INPUTS
Input Voltage Range
Input Offset Voltage
CMP
IRG
CMP
IOS
V
CC
- 3.5
±30
V
mV
4
_______________________________________________________________________________________
25V Span, 800mA Device Power Supply (DPS)
DC ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +12V, V
EE
= -12V, V
L
= +3.3V, T
J
= +30°C to +100°C. Typical values are at T
J
= +30°C, unless otherwise specified.) (Notes 1, 2)
PARAMETER
COMPARATOR OUTPUTS
Output High Voltage
Output Low Voltage
High-Impedance State
Leakage Current
High-Impedance Output
Capacitance
ANALOG INPUTS
Input Current
Input Capacitance
DIGITAL INPUTS
Input High Voltage
Input Low Voltage
VTHR Input Range
Input Current
Input Capacitance
DIGITAL OUTPUTS
Output High Voltage
Output Low Voltage
TEMPERATURE SENSOR
Analog Output Offset
Analog Output Gain
Digital Output Temperature
Threshold
Thermal-Shutdown Temperature
POWER SUPPLY
Positive Supply
Negative Supply
Total Supply Voltage
Logic Supply
Positive Supply Current
Negative Supply Current
Analog Ground Current
Logic Supply Current
Digital Ground Current
Power-Supply Rejection Ratio
V
CC
V
EE
V
CC
- V
EE
V
L
I
CC
I
EE
I
AGND
I
L
I
DGND
PSRR
No load
No load
No load
No load, all digital inputs at DGND
No load, all digital inputs at DGND
Each supply varied individually from min
to max, V
DUT
= 5.0V
+2.375
20
19
0.8
7.0
7.0
80
(Note 12)
(Note 12)
12
-15
18
-12
+30
+3.300
22
21
1.0
9.0
9.0
V
V
V
V
mA
mA
mA
mA
mA
dB
V
TSNSO
V
TSNSG
T
TSNSR
T
SDN
(Note 11)
T
J
= +28°C
3.01
10
+130
+140
V
mV/°C
°C
°C
V
OH
V
OL
V
L
= 2.375V to 3.3V, relative to DGND,
I
OUT
= +1.0mA
V
L
= 2.375V to 3.3V, relative to DGND,
I
OUT
= -1.0mA
V
L
- 0.25
0.2
V
V
CMP
OH
CMP
OL
CMP
OLK
CMP
OC
I
IN
C
IN
V
IH
V
IL
V
THR
I
IN
C
IN
0.5
±25
4
V
THR
+
0.15
V
THR
-
0.15
V
L
- 0.5
V
L
= 2.375V to 3.3V, R
PULLUP
= 1kΩ
V
L
= 2.375V to 3.3V, R
PULLUP
= 1kΩ
±5
1
V
L
- 0.2
0.4
V
V
nA
pF
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MAX9959
±5
4
nA
pF
V
V
V
µA
pF
_______________________________________________________________________________________
5
Wireless Connectivity
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