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BLP05H6110XRGY

Description
RF FET LDMOS 135V 27DB SOT12242
Categorysemiconductor    Discrete semiconductor   
File Size1MB,16 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BLP05H6110XRGY Overview

RF FET LDMOS 135V 27DB SOT12242

BLP05H6110XRGY Parametric

Parameter NameAttribute value
Transistor typeLDMOS (dual), common source
frequency108MHz
Gain27dB
Voltage - Test50V
Rated current-
Noise Figure-
Current - Test20mA
Power - output110W
Voltage - Rated135V
Package/casingSOT-1224-2
Supplier device packaging4-HSOPF
BLP05H6110XR;
BLP05H6110XRG
Power LDMOS transistor
Rev. 4 — 30 August 2016
Product data sheet
1. Product profile
1.1 General description
A 110 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
f
(MHz)
pulsed RF
108
V
DS
(V)
50
P
L
(W)
110
G
p
(dB)
27
D
(%)
75
Test signal
1.2 Features and benefits
Easy power control
Integrated double sided ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

BLP05H6110XRGY Related Products

BLP05H6110XRGY BLP05H6110XRY
Description RF FET LDMOS 135V 27DB SOT12242 FET RF 2CH 135V 108MHZ HSOP4F
Transistor type LDMOS (dual), common source LDMOS (dual), common source
frequency 108MHz 108MHz
Gain 27dB 27dB
Voltage - Test 50V 50V
Current - Test 20mA 20mA
Power - output 110W 110W
Voltage - Rated 135V 135V
Package/casing SOT-1224-2 SOT-1223-2
Supplier device packaging 4-HSOPF 4-HSOPF
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