DS1012
DS1012
2-in-1 Sub-Miniature Silicon
Delay Line with Logic
FEATURES
PIN ASSIGNMENT
IN1
OUT3
OUT1
GND
1
2
3
4
8
7
6
5
V
CC
IN2
OUT2
OUT4
•
All-silicon time delay
•
53
µW
max. CMOS quiescent mode
•
Surface mount 8-pin mini-SOIC and standard 8-pin
DIP
•
2 independent buffered delays per input
•
Option of complemented output(s)
•
Option of timed AND, NAND, OR, NOR, XOR, XNOR,
HALF-XOR and HALF-XNOR logic outputs
DS1012M 8-PIN DIP (300 MIL)
See Mech. Drawings
Section
IN1
OUT3
OUT1
GND
1
2
3
4
8
7
6
5
V
CC
IN2
OUT2
OUT4
•
Delay tolerance:
±1.5
ns (delays: 3-10 ns),
±2.0
ns (delays: 11-40 ns)
•
Vapor phase, IR and wave solderability
•
Economical
•
TTL/CMOS-compatible
•
Quick turn prototypes
•
Custom delays and logic options available
DS1012Z 8-PIN SOIC (150 MIL)
See Mech. Drawings
Section
PIN DESCRIPTION
IN1, IN2
OUT1, OUT2
OUT3, OUT4
GND
V
CC
–
–
–
–
–
Inputs
Outputs (delays)
Outputs (delays, logic)
Ground
+5 Volts
DESCRIPTION
In its most simple configuration, the DS1012 2-in-1
Sub-Miniature Silicon Delay Line Chip provides two in-
puts, each of which in turn provides independent delays
to a pair of outputs. The DS1012-1 and DS1012-3 are
examples of catalog parts having this basic configura-
tion. Any of the four outputs can be inverted at the time
of manufacture.
For applications requiring two-input timed logic func-
tions, at the time of manufacture the simple delay on
OUT4 can be replaced by one of the following: OR,
NOR, XOR, or XNOR. Similarly, a timed AND, NAND,
HALF-XOR (D3 AND D4), or NOT HALF-XOR (D3 OR
D4) can be substituted for the simple delay on OUT3.
DS1012-2, DS1012-4, and DS1012-5 are examples of
catalog parts configured with logic functions on OUT3
and OUT4. Note that DS1012-2 also utilizes an output
inversion on OUT2.
In any configuration, delays D1 (t
D1
) and D2 (t
D2
) can be
specified within the range of ~3 ns to 10 ns. Delays D3
(t
D3
) and D4 (t
D4
) can be specified to have values be-
tween ~3 ns and 40 ns. The worst case leading edge
delay accuracy at nominal voltage and room tempera-
ture is
±2
ns. The DS1012 is offered in two packages: an
8-pin DIP and an 8-pin 150 mil wide mini-SOIC.
Dallas Semiconductor offers the DS1012 in a wide vari-
ety of custom delay and logic configurations. For special
requests and quick turn delivery, call (972) 371–4348.
021798 1/7
DS1012
TEST SETUP DESCRIPTION
Figure 2 illustrates the hardware configuration used for
measuring the timing parameters on the DS1012. The
input waveform is produced by a precision pulse gener-
ator under software control connected to the inputs by
VHF switch control units. Time delays are measured by
a time interval counter (20 ps resolution) connected be-
tween the inputs and the outputs. Outputs are con-
nected to the counter by a VHF switch control unit. All
measurements are fully automated, with each instru-
ment controlled by a central computer over an IEEE 488
bus.
TEST CONDITIONS
INPUT:
Ambient Temperature:
Supply Voltage (V
CC
):
Input Pulse:
Source Impedance:
Rise and Fall Time:
Pulse Width:
Period:
25°C
±
3°C
5.0V
±
0.1V
High = 3.0V
±
0.1V
Low = 0.0V
±
0.1V
50 ohms max.
3.0 ns max.
50 ns
100 ns
OUTPUT:
Each output is loaded with a 74F04. Delay is measured
between the 1.5V level of the rising edge of the input sig-
nal and the 1.5V level of the corresponding edge of the
output.
NOTE:
These conditions are for test only and do
not restrict the operation of the device un-
der other data sheet conditions.
021798 4/7
DS1012
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-1.0V to +7.0V
0°C to 70°C
-55°C to +125°C
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
High Level Input Voltage
Low Level Input Voltage
Input Leakage Current
Active Current
Quiescent Current
High Level Output Current
Low Level Output Current
SYMBOL
V
CC
V
IH
V
IL
I
I
I
CC1
I
CC2
I
OH
I
OL
0.0V < V
I
< V
CC
V
CC
= MAX;
PERIOD = MIN
V
CC
= MAX.
V
CC
= MIN
V
OH
= 2.4V
V
CC
= MIN.
V
OL
= 0.5V
8.0
TEST
MIN
4.75
2.2
-0.5
-1.0
(0°C to 70°C; V
CC
= 5.0V
±
5%)
TYP
5.00
MAX
5.25
V
CC
+0.5
0.8
1.0
40.0
70.0
10
-1.0
UNITS
V
V
V
µA
mA
µA
mA
mA
2
5
NOTES
1
1
1
AC ELECTRICAL CHARACTERISTICS
PARAMETER
Input Pulse Width
Input to Output (leading edge)
Power-up Time
SYMBOL
t
WI
t
D1
, t
D2
,
t
D3
, t
D4
t
PU
Period
2(t
WI
)
MIN
TYP
(T
A
= 25
°
C; V
CC
= 5V
±
5%)
MAX
UNITS
ns
ns
0
ns
ns
NOTES
6
3, 4
7
CAPACITANCE
PARAMETER
Input Capacitance
SYMBOL
C
IN
MIN
TYP
5
MAX
10
UNITS
pF
(T
A
= 25
°
C)
NOTES
021798 5/7
MCU
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