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BLP05H6150XRGY

Description
RF FET LDMOS 135V 27DB SOT12242
Categorysemiconductor    Discrete semiconductor   
File Size1MB,16 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
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BLP05H6150XRGY Overview

RF FET LDMOS 135V 27DB SOT12242

BLP05H6150XRGY Parametric

Parameter NameAttribute value
Transistor typeLDMOS (dual), common source
frequency108MHz
Gain27dB
Voltage - Test50V
Rated current-
Noise Figure-
Current - Test100mA
Power - output150W
Voltage - Rated135V
Package/casingSOT-1224-2
Supplier device packaging4-HSOPF
BLP05H6150XR;
BLP05H6150XRG
Power LDMOS transistor
Rev. 4 — 21 September 2016
Product data sheet
1. Product profile
1.1 General description
A 150 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
f
(MHz)
pulsed RF
CW
108
1.8 to 30
135
174 to 230
DVB-T
174 to 230
V
DS
(V)
50
50
50
50
50
P
L
(W)
150
100
150
150
25
G
p
(dB)
27
29
26
22
23
D
(%)
75
60
73
67
29
ACPR
(dBc)
-
-
-
-
36
Test signal
1.2 Features and benefits
Easy power control
Integrated double sided ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

BLP05H6150XRGY Related Products

BLP05H6150XRGY BLP05H6150XRY
Description RF FET LDMOS 135V 27DB SOT12242 RF FET LDMOS 135V 27DB SOT12232
Transistor type LDMOS (dual), common source LDMOS (dual), common source
frequency 108MHz 108MHz
Gain 27dB 27dB
Voltage - Test 50V 50V
Current - Test 100mA 100mA
Power - output 150W 150W
Voltage - Rated 135V 135V
Package/casing SOT-1224-2 SOT-1223-2
Supplier device packaging 4-HSOPF 4-HSOPF
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