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BLS9G2735L-50U

Description
RF MOSFET SOT1135A
Categorysemiconductor    Discrete semiconductor   
File Size1024KB,14 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
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BLS9G2735L-50U Overview

RF MOSFET SOT1135A

BLS9G2735L-50U Parametric

Parameter NameAttribute value
Transistor type-
frequency2.7GHz ~ 3.5GHz
Gain12dB
Rated current-
Noise Figure-
Power - output50W
Voltage - Rated32V
Package/casingSOT-1135A
Supplier device packagingSOT1135A
BLS9G2735L-50;
BLS9G2735LS-50
LDMOS S-band radar power transistor
Rev. 1 — 6 October 2017
Product data sheet
1. Product profile
1.1 General description
Single ended 50 W LDMOS power transistor for S-band radar applications in the
frequency range from 2.7 GHz to 3.5 GHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 100 mA; in a class-AB demo
test circuit.
Test signal
pulsed RF
f
(GHz)
2.7 to 3.5
V
DS
(V)
32
P
L(1dB)
(W)
45
G
p
(dB)
12
D
(%)
48
1.2 Features and benefits
Single ended
Small size
High efficiency
Excellent ruggedness
Designed for S-band operation
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz

BLS9G2735L-50U Related Products

BLS9G2735L-50U BLS9G2735LS-50U
Description RF MOSFET SOT1135A RF MOSFET LDMOS SOT1135B
frequency 2.7GHz ~ 3.5GHz 2.7GHz ~ 3.5GHz
Gain 12dB 12dB
Power - output 50W 50W
Voltage - Rated 32V 32V
Package/casing SOT-1135A SOT-1135B
Supplier device packaging SOT1135A SOT1135B
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