BLA9G1011L(S)-300;
BLA9G1011L(S)-300G
Power LDMOS transistor
Rev. 1 — 25 July 2017
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to
1090 MHz.
Table 1.
Typical information
Typical RF performance at T
case
= 25
C; t
p
= 50
s;
= 2 %; I
Dq
= 100 mA; in a class-AB demo test
circuit.
Test signal
pulsed RF
f
(MHz)
1030
1060
1090
V
DS
(V)
32
32
32
P
L
(W)
317
317
317
G
p
(dB)
20.6
21.5
21.8
D
(%)
63.5
64.8
64.8
t
r
(ns)
14
14
14
t
f
(ns)
5
5
5
1.2 Features and benefits
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range
BLA9G1011L(S)-300(G)
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLA9G1011L-300 (SOT502A)
1
3
2
1
2
3
sym112
BLA9G1011LS-300 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
3
sym112
BLA9G1011L-300G (SOT502F)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
3
sym112
BLA9G1011LS-300G (SOT502E)
1
2
3
drain
gate
source
[1]
1
1
2
3
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLA9G1011L-300
BLA9G1011LS-300
BLA9G1011L-300G
BLA9G1011LS-300G
-
-
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
eared flanged ceramic package; 2 leads; 2 mounting
holes
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
SOT502F
SOT502E
Type number
BLA9G1011L-300_LS-300_L-300G_LS-300G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2017
2 of 14
BLA9G1011L(S)-300(G)
Power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
Z
th(j-c)
Thermal characteristics
Conditions
Typ
Unit
transient thermal impedance from junction to T
case
= 25
C;
t
p
= 100
s;
case
= 10 %
0.140 K/W
Symbol Parameter
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 330 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 330 mA
Min
65
1.5
-
-
-
-
-
Typ
-
2.0
-
60
-
3
Max
-
2.5
4.2
-
420
-
Unit
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3.3 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 11.55 A
0.043 -
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 50
s;
= 2 %; V
DS
= 32 V; f = 1060 MHz; I
Dq
= 100 mA; T
case
= 25
C;
unless otherwise specified; in a class-AB production test circuit for straight leads.
Symbol
G
p
RL
in
D
t
r
t
f
Parameter
power gain
input return loss
drain efficiency
rise time
fall time
Conditions
P
L
= 300 W
P
L
= 300 W
P
L
= 300 W
P
L
= 300 W
P
L
= 300 W
Min
18
-
56
-
-
Typ
19.5
10
60.5
14
5
Max
-
-
-
-
-
Unit
dB
dB
%
ns
ns
BLA9G1011L-300_LS-300_L-300G_LS-300G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2017
3 of 14
BLA9G1011L(S)-300(G)
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLA9G1011L-300, BLA9G1011LS-300, BLA9G1011L-300G and
BLA9G1011LS-300G are enhanced rugged devices and are capable of withstanding a
load mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: t
p
= 50
s;
= 2 %; V
DS
= 32 V; I
Dq
= 100 mA; P
L
= 300 W; f = 1030 MHz to
1090 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Typical values unless otherwise specified.
f
(MHz)
1000
1050
1100
Z
S
()
0.87
j2.02
1.34
j2.26
1.82
j2.77
Z
L
()
1.38
j1.78
1.4
j1.54
1.4
j1.54
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLA9G1011L-300_LS-300_L-300G_LS-300G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2017
4 of 14
BLA9G1011L(S)-300(G)
Power LDMOS transistor
7.3 Test circuit
60 mm
C2
C5
R1
C7
C1
60 mm
C8
C10
C3
C6
R2
C14
R4
C12
C13
R6
C15
amp00349
60 mm
R5
C18
R3
C17 C19 C21
C9
C11
C22
C20
C23
R_sh
C4
C16
Printed-Circuit Board (PCB): Rogers RT/duroid 6002; thickness = 0.762 mm; top/bottom copper
plating.
See
Table 9
for a list of components.
Fig 2.
Demo test circuit component layout
Table 9.
Demo test circuit list of components
See
Figure 2
for component layout.
Component Description
C1
C2, C3
C4
C5, C6
C7, C8
C9, C10
C11
C12, C17
C13, C18
C14, C19
C15, C20
C16, C21
C22
C23
R1, R2
R3, R4
R5, R6
R_sh
Value
Remarks
ATC: ATC100A560FT150XTV
ATC: ATC100B750FT500XTV
ATC: ATC100B2R4BT500XTV
ATC: ATC100A620FT150XTV
ATC: ATC100B3R3BT500XTV
ATC: ATC100B7R5BT500XTV
ATC: ATC100B4R7BT500XTV
ATC: ATC100B620FT500XTV
ATC: ATC100B751FT500XTV
Murata: GRM188R71H103KA01D
Murata: GRM31C5C1E104JA01L
Murata: GRM319R71H104KA01D
ATC: ATC100B560FT500XTV
Nichicon: UVZ1J471MHD1TO
0603
0603
0603
Ohmite: FC4L110R010FER
multilayer ceramic chip capacitor 56 pF
multilayer ceramic chip capacitor 750 pF
multilayer ceramic chip capacitor 2.4 pF
multilayer ceramic chip capacitor 62 pF
multilayer ceramic chip capacitor 3.3 pF
multilayer ceramic chip capacitor 7.5 pF
multilayer ceramic chip capacitor 4.7 pF
multilayer ceramic chip capacitor 62 pF
multilayer ceramic chip capacitor 750 pF
multilayer ceramic chip capacitor 10 nF
multilayer ceramic chip capacitor 100 nF
multilayer ceramic chip capacitor 10
F
multilayer ceramic chip capacitor 56 pF
electrolytic capacitor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
470
F,
63 V
1 k
5.1
3.9
10 m
BLA9G1011L-300_LS-300_L-300G_LS-300G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 25 July 2017
5 of 14
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