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1R5GH45

Description
1.5 A, 400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size136KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1R5GH45 Overview

1.5 A, 400 V, SILICON, RECTIFIER DIODE

1R5GH45 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instruction3-4B1A, 2 PIN
Contacts2
Manufacturer packaging code3-4B1A
Reach Compliance Codeunknown
Is SamacsysN
Other featuresFORMED LEAD OPTIONS ARE AVAILABLE
applicationVERY FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current55 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse current100 µA
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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