1PMT5920B Series
3.2 Watt Plastic
Surface Mount
POWERMITE
®
Package
This complete new line of 3.2 Watt Zener Diodes are offered in
highly efficient micro miniature, space saving surface mount with its
unique heat sink design. The POWERMITE package has the same
thermal performance as the SMA while being 50% smaller in
footprint area and delivering one of the lowest height profiles
(1.1 mm) in the industry. Because of its small size, it is ideal for use
in cellular phones, portable devices, business machines and many
other industrial/consumer applications.
Features
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PLASTIC SURFACE MOUNT
3.2 WATT ZENER DIODES
6.2 − 47 VOLTS
1
1: CATHODE
2: ANODE
2
•
•
•
•
•
•
•
•
•
•
•
•
•
Zener Breakdown Voltage: 6.2 − 47 V
DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C
Low Leakage < 5
mA
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile − Maximum Height of 1.1 mm
Integral Heat Sink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint − Footprint Area of 8.45 mm
2
Supplied in 12 mm Tape and Reel
T1 = 3,000 Units per Reel
T3 = 12,000 Units per Reel
Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
POWERMITE is JEDEC Registered as DO−216AA
Cathode Indicated by Polarity Band
Pb−Free Packages are Available
1
2
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
1
CATHODE
M
xxBG
G
2
ANODE
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
M
xxB
G
readily solderable
MOUNTING POSITION:
Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
= Date Code
= Specific Device Code
(See Table on Page 2)
= Pb−Free Package
260°C for 10 Seconds
ORDERING INFORMATION
Device
1PMT59xxBT1
Package
Shipping
†
POWERMITE 3,000/Tape&Reel
3,000/Tape&Reel
1PMT59xxBT1G POWERMITE
(Pb−Free)
1PMT59xxBT3
POWERMITE 12,000/Tape&Reel
1PMT59xxBT3G POWERMITE 12,000/Tape&Reel
(Pb−Free)
Individual devices are listed on page 2 of this data sheet.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
July, 2005 − Rev. 3
Publication Order Number:
1PMT5920B/D
1PMT5920B Series
MAXIMUM RATINGS
Rating
DC Power Dissipation @ T
A
= 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Lead (Anode)
Maximum DC Power Dissipation (Note 2)
Thermal Resistance from Junction−to−Tab (Cathode)
Operating and Storage Temperature Range
Symbol
°P
D
°
R
qJA
R
qJanode
°P
D
°
R
qJcathode
T
J
, T
stg
Value
500
4.0
248
35
3.2
23
−55 to +150
Unit
°mW
mW/°C
°C/W
°C/W
W
°C/W
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with recommended minimum pad size, PC board FR−4.
2. At Tab (Cathode) temperature, T
tab
= 75°C
ELECTRICAL CHARACTERISTICS
(T
L
= 25°C unless
otherwise noted, V
F
= 1.5 V Max. @ I
F
= 200 mAdc for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
F
I
I
R
V
F
I
ZT
V
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
L
= 30°C unless otherwise noted, V
F
= 1.25 Volts @ 200 mA)
Zener Voltage
(Note 3)
Device
Marking
20B
21B
22B
23B
24B
25B
27B
29B
30B
31B
33B
34B
35B
36B
39B
V
Z
@ I
ZT
(Volts)
Min
5.89
6.46
7.12
7.79
8.64
9.5
11.4
14.25
15.2
17.1
20.9
22.8
25.65
28.5
37.05
Nom
6.2
6.8
7.5
8.2
9.1
10
12
15
16
18
22
24
27
30
39
Max
6.51
7.14
7.88
8.61
9.56
10.5
12.6
15.75
16.8
18.9
23.1
25.2
28.35
31.5
40.95
I
ZT
(mA)
60.5
55.1
50
45.7
41.2
37.5
31.2
25
23.4
20.8
17
15.6
13.9
12.5
9.6
I
R
@ V
R
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
R
(V)
4.0
5.2
6.0
6.5
7.0
8.0
9.1
11.4
12.2
13.7
16.7
18.2
20.6
22.8
29.7
Z
ZT
@ I
ZT
(Note 4)
(W)
2.0
2.5
3.0
3.5
4.0
4.5
6.5
9.0
10
12
17.5
19
23
28
45
Z
ZK
@ I
ZK
(Note 4)
(W)
200
200
400
400
500
500
550
600
600
650
650
700
700
750
900
I
ZK
(mA)
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Device*
1PMT5920BT1, T3,G
1PMT5921BT1, T3,G
1PMT5922BT1, T3,G
1PMT5923BT1, T3,G
1PMT5924BT1, T3,G
1PMT5925BT1, T3,G
1PMT5927BT1, T3,G
1PMT5929BT1, T3,G
1PMT5930BT1, T3,G
1PMT5931BT1, T3,G
1PMT5933BT1, T3,G
1PMT5934BT1, T3,G
1PMT5935BT1, T3,G
1PMT5936BT1, T3,G
1PMT5939BT1, T3,G
1PMT5941BT1, T3,G
41B
44.65
47
49.35
8.0
1.0
35.8
67
1000
0.25
3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C.
4. Zener Impedance Derivation Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The
specified limits are for I
Z
(ac) = 0.1 I
Z
(dc) with the ac frequency = 60 Hz.
* The “G” suffix indicates Pb−Free package available.
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2
1PMT5920B Series
TYPICAL CHARACTERISTICS
P D , MAXIMUM POWER DISSIPATION (W)
3.5
3
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
175
T, TEMPERATURE (°C)
0.1
5
6
9
10
7
8
V
Z
, ZENER VOLTAGE (VOLTS)
11
T
L
100
I
Z
, ZENER CURRENT (mA)
10
1
Figure 1. Steady State Power Derating
q
VZ
, TEMPERATURE COEFFICIENT (mV/°C)
100
IZ , ZENER CURRENT (mA)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
10
20
30
40
50
60
70
80
V
Z
, ZENER VOLTAGE (VOLTS)
90
100
10
8
6
4
2
0
−2
−4
2
4
V
Z
@ I
ZT
Figure 2. V
Z
to 10 Volts
6
8
10
V
Z
, ZENER VOLTAGE (VOLTS)
12
Figure 3. V
Z
= 12 thru 47 Volts
q
VZ
, TEMPERATURE COEFFICIENT (mV/°C)
200
V
Z
@ I
ZT
100
70
50
30
20
Figure 4. Zener Voltage − To 12 Volts
Z Z , DYNAMIC IMPEDANCE (OHMS)
200
I
Z(dc)
= 1mA
100
70
50
30
20
10
7
5
3
2
5
7
10 mA
20 mA
i
Z(rms)
= 0.1 I
Z(dc)
70
100
10
10
20
30
50
70
100
V
Z
, ZENER VOLTAGE (VOLTS)
200
10
20
30
50
V
Z
, ZENER VOLTAGE (VOLTS)
Figure 5. Zener Voltage − 14 To 47 Volts
Figure 6. Effect of Zener Voltage
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3
1PMT5920B Series
Z Z , DYNAMIC IMPEDANCE (OHMS)
1k
500
200
100
50
20
10
5
2
1
0.5 1
22 V
6.8 V
2
5
10
20
50 100 200
500
I
Z
, ZENER TEST CURRENT (mA)
12 V
T
J
= 25°C
i
Z(rms)
= 0.1 I
Z(dc)
Figure 7. Effect of Zener Current
10,000
C, CAPACITANCE (pF)
1000
MEASURED @ 0 V BIAS
MEASURED @ 50% V
R
100
10
1
10
V
Z
, REVERSE ZENER VOLTAGE (VOLTS)
100
Figure 8. Capacitance versus Reverse
Zener Voltage
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4
1PMT5920B Series
OUTLINE DIMENSIONS
POWERMITE
)
CASE 457−04
ISSUE D
−A−
C
J
S
F
0.08 (0.003)
M
T B
S
C
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
DIM
A
B
C
D
F
H
J
K
L
R
S
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.75
2.05 0.069
0.081
1.75
2.18 0.069
0.086
0.85
1.15 0.033
0.045
0.40
0.69 0.016
0.027
0.70
1.00 0.028
0.039
−0.05
+0.10 −0.002 +0.004
0.10
0.25 0.004
0.010
3.60
3.90 0.142
0.154
0.50
0.80 0.020
0.031
1.20
1.50 0.047
0.059
0.50 REF
0.019 REF
TERM. 1
−B−
K
TERM. 2
R
L
J
H
−T−
0.08 (0.003)
M
D
T B
S
C
S
SOLDERING FOOTPRINT*
0.635
0.025
2.67
0.105
0.762
0.030
2.54
0.100
1.27
0.050
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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