Data Sheet
BCR10FM-14LJ
700V - 10A - Triac
Medium Power Use
Features
•
•
•
•
I
T (RMS)
: 10 A
V
DRM
: 800 V (Tj=125C)
Tj: 150°C
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA
•
Insulated Type
•
Planar Passivation Type
•
Viso: 2000V
R07DS0978EJ0200
Rev.2.00
Jul. 7, 2017
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
1 2
3
Application
Power supply, motor control, heater control, solid state relay, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Isolation voltage
Note5
Notes: 1. Gate open.
Note1
Symbol
V
DRM
V
DSM
Ratings
10
100
41.6
5
0.5
10
2
–40
to +150
–40
to +150
2000
Voltage class
14
800
700
840
Unit
A
A
A
2
s
W
W
V
A
C
C
V
Unit
V
V
V
Conditions
Tj=125C
Tj=150C
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
V
iso
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 103C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Ta=25C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
R07DS0978EJ0200 Rev.2.00
Jul. 7, 2017
Page 1 of 8
BCR10FM-14LJ
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
Notes: 2.
3.
4.
5.
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
30
30
—
—
4.1
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
V
C/W
V/s
V/s
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Tj = 150C
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 15 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th(c-f)
in case of greasing is 0.5C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c =
–5.0
A/ms
3. Peak off-state voltage
V
D
= 400 V
Time
(di/dt)c
Time
Time
V
D
R07DS0978EJ0200 Rev.2.00
Jul. 7, 2017
Page 2 of 8
BCR10FM-14LJ
Data Sheet
Performance Curves
Maximum On-State Characteristics
10
2
100
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
Tj = 150°C
10
1
Tj = 25°C
80
60
40
20
0
10
0
10
0
0
1
2
3
4
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
10
1
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Voltage (V)
I
RGT I
V
GT
= 1.5V
10
0
10
2
I
FGT I
10
- 1
I
RGT III
10
1
- 40
I
FGT I
I
RGT I
, I
RGT III
10
2
V
GD
= 0.1V
10
3
10
4
10
1
0
40
80
120
160
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
5
4
3
2
1
0
-1
10
10
3
10
4
10
2
10
1
- 40
0
40
80
120
160
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0978EJ0200 Rev.2.00
Jul. 7, 2017
Page 3 of 8
BCR10FM-14LJ
Data Sheet
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
16
Transient Thermal Impedance (°C/W)
10
3
On-State Power Dissipation (W)
No Fins
14
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
- 1 1
10
10
2
10
3
10
4
10
5
Conduction Time (Cycles at 60Hz)
Allowable Case Temperature vs.
able
RMS On-State Current
160
Curves apply regardless
of conduction angle
160
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
Ambient Temperature (°C)
Case Temperature (°C)
140
140
120
100
80
10
12
14
16
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×100
(%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
0.5
1.0
10
5
10
4
10
3
1.5
2.0
2.5
3.0
10
2
- 40
0
40
80
120
160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0978EJ0200 Rev.2.00
Jul. 7, 2017
Page 4 of 8
BCR10FM-14LJ
Data Sheet
Holding Current vs.
Junction Temperature
10
2
Distribution
10
3
III Quadrant
Typical Example
Latching Current vs.
Junction Temperature
Distribution
T
2
+,G
-
Typical Example
Latching Current (mA)
Holding Current (mA)
10
2
10
1
10
1
T
2
+,G+
T
2
-
,G
-
Typical Example
0
40
80
120
160
I Quadrant
Typical Example
V
D
=12V
10
0
- 40
0
40
80
120
160
10
0
- 40
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
160
140
120
100
80
60
40
Typical Example
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Typical Example
Tj = 125°C
III Quadrant
120
100
80
60
40
20
0
10
1
10
2
10
3
10
4
I Quadrant
20
0
- 40
0
40
80
120
160
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/s)
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
10
3
10
4
I Quadrant
III Quadrant
Commutation Characteristics (Tj = 125°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/s)
Typical Example
Tj = 150°C
Typical Example
Tj = 125°C, I
T
= 4 A,
t
= 500
s
V
D
= 200 f = 3 Hz
200V,
Minimum
Characteristics
Value
III Quadrant
10
1
10
0
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
t
Time
I Quadrant
10
2
10
0
10
1
Rate of Rise of Off-State Voltage (V/s)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0978EJ0200 Rev.2.00
Jul. 7, 2017
Page 5 of 8
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