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RJK5020DPK-00#T0

Description
MOSFET N-CH 500V 40A TO3P
CategoryDiscrete semiconductor    The transistor   
File Size82KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJK5020DPK-00#T0 Overview

MOSFET N-CH 500V 40A TO3P

RJK5020DPK-00#T0 Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeTO-3P
package instruction,
Contacts4
Manufacturer packaging codePRSS0004ZE-A4
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Preliminary
Datasheet
RJK5020DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
REJ03G1263-0300
Rev.3.00
Jun 30, 2010
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
ch-c
Tch
Tstg
Ratings
500
±30
40
120
40
120
12.5
8.6
200
0.625
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1263-0300 Rev.3.00
Jun 30, 2010
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