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BLP10H660PY

Description
RF MOSFET LDMOS 50V 4-HSOPF
Categorysemiconductor    Discrete semiconductor   
File Size2MB,15 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Download Datasheet Parametric Compare View All

BLP10H660PY Overview

RF MOSFET LDMOS 50V 4-HSOPF

BLP10H660PY Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency1GHz
Gain18dB
Voltage - Test50V
Rated current1.4µA
Noise Figure-
Current - Test40mA
Power - output60W
Voltage - Rated110V
Package/casingSOT-1223-2
Supplier device packaging4-HSOPF
BLP10H660P; BLP10H660PG
Power LDMOS transistor
Rev. 1 — 20 December 2016
Product data sheet
1. Product profile
1.1 General description
A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to
1000 MHz band.
Table 1.
Application information
f
(MHz)
pulsed RF
720
V
DS
(V)
50
P
L
(W)
60
G
p
(dB)
18
D
(%)
72
Test signal
1.2 Features and benefits
Easy power control
Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1000 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

BLP10H660PY Related Products

BLP10H660PY BLP10H660PGY
Description RF MOSFET LDMOS 50V 4-HSOPF RF MOSFET LDMOS 50V 4-HSOP
Transistor type LDMOS LDMOS
frequency 1GHz 1GHz
Gain 18dB 18dB
Voltage - Test 50V 50V
Rated current 1.4µA 1.4µA
Current - Test 40mA 40mA
Power - output 60W 60W
Voltage - Rated 110V 110V
Package/casing SOT-1223-2 SOT-1224-2
Supplier device packaging 4-HSOPF 4-HSOPF
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