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MUR1640CT C0G

Description
DIODE ARRAY GP 400V 16A TO220AB
Categorysemiconductor    Discrete semiconductor   
File Size384KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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MUR1640CT C0G Overview

DIODE ARRAY GP 400V 16A TO220AB

MUR1640CT C0G Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)400V
Current - average rectification (Io) (per diode)16A
Voltage at different If - Forward (Vf1.3V @ 8A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)50ns
Current at different Vr - Reverse leakage current10µA @ 400V
Operating Temperature - Junction-55°C ~ 175°C
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220AB
MUR1620CT - MUR1660CT
Taiwan Semiconductor
CREAT BY ART
16A, 200V - 600V Switch mode Power Rectifiers
FEATURES
- Ultrafast recovery times
- 175°C operating junction temperature
- Popular TO-220AB Package
- High temperature glass passivated junction
- High voltage capability to 600 volts
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-220AB
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage T
J
=25°C
@ 8 A (Note 1)
T
J
=150°C
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
R
θJC
T
J
T
STG
0.975
0.895
5
250
25
3
- 55 to +175
- 55 to +175
MUR
1620CT
200
140
200
MUR
1640CT
400
280
400
16
100
1.3
1.1
10
500
50
2
1.5
1.2
MUR
1660CT
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
°C/W
°C
°C
Version: H1511

MUR1640CT C0G Related Products

MUR1640CT C0G MUR1620CT C0G MUR1660CT C0G MUR1640CTHC0G MUR1620CTHC0G MUR1660CTHC0G
Description DIODE ARRAY GP 400V 16A TO220AB DIODE ARRAY GP 200V 16A TO220AB DIODE ARRAY GP 600V 16A TO220AB DIODE ARRAY GP 400V 16A TO220AB DIODE ARRAY GP 200V 16A TO220AB DIODE ARRAY GP 600V 16A TO220AB
Diode type standard standard standard RECTIFIER DIODE RECTIFIER DIODE standard
Diode configuration 1 pair of common cathodes 1 pair of common cathodes 1 pair of common cathodes - - 1 pair of common cathodes
Voltage - DC Reverse (Vr) (Maximum) 400V 200V 600V - - 600V
Current - average rectification (Io) (per diode) 16A 16A 16A - - 16A
Voltage at different If - Forward (Vf 1.3V @ 8A 975mV @ 8A 1.5V @ 8A - - 1.5V @ 8A
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) - - Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 50ns 25ns 50ns - - 50ns
Current at different Vr - Reverse leakage current 10µA @ 400V 5µA @ 200V 10µA @ 600V - - 10µA @ 600V
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C - - -55°C ~ 175°C
Installation type Through hole Through hole Through hole - - Through hole
Package/casing TO-220-3 TO-220-3 TO-220-3 - - TO-220-3
Supplier device packaging TO-220AB TO-220AB TO-220AB - - TO-220AB
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