MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications.
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
Moisture Sensitivity Level: 1
•
ESD Rating
−
Human Body Model: Class 1
ESD Rating
−
Machine Model: Class B
•
The SC−59 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
•
Pb−Free Package is Available
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
6x M
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PIN 3
COLLECTOR
(OUTPUT)
R1
PIN 2
BASE
(INPUT)
R2
PIN 1
EMITTER
(GROUND)
3
2
1
SC−59
CASE 318D
PLASTIC
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance
−
Junction−to−Ambient
Thermal Resistance
−
Junction−to−Lead
Junction and Storage
Temperature Range
Symbol
P
D
Max
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
−55
to +150
Unit
mW
°C/W
°C/W
°C/W
°C
6x = Specific Device Code*
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
R
qJA
R
qJL
T
J
, T
stg
DEVICE MARKING INFORMATION
*See device marking table on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
Semiconductor Components Industries, LLC, 2005
January, 2005
−
Rev. 14
1
Publication Order Number:
MUN2111T1/D
MUN2111T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
MUN2111T1
MUN2111T1G
MUN2112T1
MUN2112T1G
MUN2113T1
MUN2113T1G
MUN2114T1
MUN2114T1G
MUN2115T1 (Note 3)
MUN2116T1 (Note 3)
MUN2116T1G (Note 3)
MUN2130T1 (Note 3)
MUN2131T1 (Note 3)
MUN2132T1 (Note 3)
MUN2132T1G (Note 3)
MUN2133T1 (Note 3)
MUN2134T1 (Note 3)
MUN2136T1
MUN2137T1
MUN2140T1 (Note 3)
Package
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
SC−59
SC−59
SC−59
Marking
6A
6A
6B
6B
6C
6C
6D
6D
6E
6F
6F
6G
6H
6J
6J
6K
6L
6N
6P
6T
R1 (K)
10
10
22
22
47
47
10
10
10
4.7
4.7
1.0
2.2
4.7
4.7
4.7
22
100
47
47
R2 (K)
10
10
22
22
47
47
47
47
∞
∞
∞
1.0
2.2
4.7
4.7
47
47
100
22
∞
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
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2
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
−
−
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2136T1
MUN2137T1
MUN2131T1
MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
MUN2140T1
MUN2136T1
MUN2137T1
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
120
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
60
100
140
140
250
250
5.0
15
27
140
130
150
140
250
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
(I
C
= 10 mA, I
B
= 5.0 mA)
(I
C
= 10 mA, I
B
= 1.0 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%.
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3
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
(Note 4)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW)
MUN2130T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
MUN2140T1
Input Resistor
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
MUN2111T1/MUN2112T1/MUN2113T1/
MUN2136T1
MUN2114T1
MUN2115T1/MUN2116T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
MUN2137T1
V
OH
4.9
−
−
Vdc
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
0.8
0.17
−
0.8
0.055
0.38
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
1.0
0.21
−
1.0
0.1
0.47
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
1.2
0.25
−
1.2
0.185
0.56
2.6
kW
Resistor Ratio
R
1
/R
2
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%.
350
P
D,
POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
0
50
100
150
R
qJA
= 370°C/W
+12 V
Typical Application
for PNP BRTs
LOAD
T
A
, AMBIENT TEMPERATURE (5°C)
Figure 1. Derating Curve
Figure 2. Inexpensive, Unregulated Current Source
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4
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
−
MUN2111T1
V
CE(sat),
MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
1
I
C
/I
B
= 10
T
A
=
−2°5C
75°C
0.1
h
FE,
DC CURRENT GAIN
1000
V
CE
= 10 V
25°C
T
A
= 75°C
100
−25°C
25°C
0.01
0
40
60
I
C
, COLLECTOR CURRENT (mA)
20
80
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. V
CE(sat)
vs. I
C
4
I
C,
COLLECTOR CURRENT (mA)
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
Figure 4. DC Current Gain
75°C
25°C
T
A
=
−25°C
C
ob,
CAPACITANCE (pF)
3
10
1
2
0.1
V
O
= 5 V
1
0.01
0.001
0
1
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
2
3
4
5
6
7
8
V
in
, INPUT VOLTAGE (VOLTS)
9
10
Figure 5. Output Capacitance
100
V
O
= 0.2 V
V
in,
INPUT VOLTAGE (VOLTS)
Figure 6. Output Current vs. Input Voltage
10
T
A
=
−25°C
25°C
75°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Input Voltage vs. Output Current
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