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1N6273A

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size133KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

1N6273A Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N6273A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 41A-04
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, HIGH RELIABILITY, LOW IMPEDANCE
Maximum breakdown voltage12.6 V
Minimum breakdown voltage11.4 V
Breakdown voltage nominal value12 V
Shell connectionISOLATED
Maximum clamping voltage16.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10.2 V
surface mountNO
technologyZENER
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
1N6267A Series
1500 Watt Mosorbt Zener
Transient Voltage
Suppressors
Unidirectional
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Features
http://onsemi.com
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
Working Peak Reverse Voltage Range
5.8 V to 214 V
Peak Power
1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available*
MARKING DIAGRAMS
A
1.5KE
xxxA
YYWWG
G
A
1N6
xxx
YYWWG
G
A
= Assembly Location
1.5KExxxA = ON Device Code
1N6xxx
= JEDEC Device Code
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16 in from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
ORDERING INFORMATION
Device
1.5KExxxAG
1.5KExxxARL4G
1N6xxxAG
1N6xxxARL4G
Package
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Shipping
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
October, 2011
Rev. 13
1
Publication Order Number:
1N6267A/D
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