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SFF1006GAHC0G

Description
DIODE GEN PURP 400V 10A ITO220AB
CategoryDiscrete semiconductor    diode   
File Size391KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

SFF1006GAHC0G Overview

DIODE GEN PURP 400V 10A ITO220AB

SFF1006GAHC0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionITO-220AB, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage400 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SFF1001GA - SFF1008GA
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 600V Isolated Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF.
- High current capability
- High reliability
- High surge current capability
- Low power loss.
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max. (5 in-lbs. max.)
Weight:
1.8 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SFF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 5A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V DC.
T
J
=25°C
T
J
=125°C
GA
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
70
8
- 55 to +150
- 55 to +150
0.975
10
400
35
50
50
35
50
SFF
GA
100
70
100
SFF
GA
150
105
150
SFF
GA
200
140
200
10
125
1.3
1.7
SFF
GA
300
210
300
SFF
GA
400
280
400
SFF
GA
500
350
500
SFF
GA
600
420
600
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
SYMBOL 1001 1002 1003 1004 1005 1006 1007 1008 UNIT
Document Number: DS_D0000132
Version: D15
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