3 A, SILICON, RECTIFIER DIODE, DO-201AD
| Parameter Name | Attribute value |
| Maker | JGD（Jinan Gude Electronic Device） |
| package instruction | O-PALF-W2 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Other features | HIGH RELIABILITY |
| application | GENERAL PURPOSE |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V |
| JEDEC-95 code | DO-201AD |
| JESD-30 code | O-PALF-W2 |
| Maximum non-repetitive peak forward current | 200 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 3 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum repetitive peak reverse voltage | 800 V |
| Maximum reverse current | 5 µA |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
| 1N5407 | 1N5400 | 1N5401 | 1N5404 | 1N5408 | 1N5406 | |
|---|---|---|---|---|---|---|
| Description | 3 A, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD | RECTIFIER DIODE,1KV V(RRM),DO-204AE | 3 A, 600 V, SILICON, RECTIFIER DIODE |
| Maker | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） |
| package instruction | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Is Samacsys | N | N | N | N | N | N |
| Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V |
| JEDEC-95 code | DO-201AD | DO-201AD | DO-201AD | DO-201AD | DO-201AD | DO-201AD |
| JESD-30 code | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
| Maximum non-repetitive peak forward current | 200 A | 200 A | 200 A | 200 A | 200 A | 200 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Maximum repetitive peak reverse voltage | 800 V | 50 V | 100 V | 400 V | 1000 V | 600 V |
| Maximum reverse current | 5 µA | 5 µA | 5 µA | 5 µA | 5 µA | 5 µA |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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