BLF6G27-100; BLF6G27LS-100
WiMAX power LDMOS transistor
Rev. 02 — 8 July 2010
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
BLF6G27-100
1-carrier W-CDMA
[1]
1-carrier N-CDMA
[2]
BLF6G27LS-100
1-carrier W-CDMA
[1]
1-carrier N-CDMA
[2]
[1]
[2]
[3]
f
(MHz)
2500 to 2700
2500 to 2700
2500 to 2700
2500 to 2700
V
DS
(V)
28
28
28
28
P
L(AV)
(W)
14
14
14
14
G
p
(dB)
16.5
17
17
17
η
D
(%)
23
23
23
23
ACPR
885k
(dBc)
-
−50
[3]
-
−50
[3]
ACPR
1980k
(dBc)
-
−65
[3]
-
−65
[3]
ACPR
5M
(dBc)
−40
-
−41
-
ACPR
10M
(dBc)
−59
-
−60
-
Signal is a one carrier, TM1 W-CDMA signal with 64 DPCH and 100 % clipping. PAR is 9.65 dB at 0.01 % probability on CCDF.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz.
Measured within 30 kHz bandwidth.
1.2 Features and benefits
Typical 1-carrier W-CDMA performance (single carrier W-CDMA TM1 with 64 DPCH
and 100 % clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; channel
bandwidth is 3.84 MHz) at a frequency of 2500 MHz, 2600 MHz and 2700 MHz, a
supply voltage of 28 V and an I
Dq
of 900 mA:
Average output power = 14 W
Power gain = 17 dB
Drain efficiency = 23 %
ACPR
5M
=
−41
dBc
Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz, 2600 MHz
and 2700 MHz, a supply voltage of 28 V and an I
Dq
of 900 mA:
Average output power = 14 W
Power gain = 17 dB
Drain efficiency = 23 %
ACPR
885k
=
−50
dBc (within 30 kHz bandwidth)
NXP Semiconductors
BLF6G27-100; BLF6G27LS-100
WiMAX power LDMOS transistor
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
1.3 Applications
RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G27-100 (SOT502A)
1
3
2
2
3
sym112
1
BLF6G27LS-100 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G27-100
-
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
BLF6G27LS-100 -
BLF6G27-100_BLF6G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2010
2 of 14
NXP Semiconductors
BLF6G27-100; BLF6G27LS-100
WiMAX power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Min
-
−0.5
-
−65
-
Max
65
+13
29
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Type
BLF6G27LS-100
Typ
0.68
0.5
Unit
K/W
K/W
T
case
= 80
°C;
P
L
= 100 W BLF6G27-100
R
th(j-case)
thermal resistance from
junction to case
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 150 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5.25 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.25 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
-
22.3
-
-
-
-
Typ
-
2
-
27
-
10.5
0.1
2.4
Max
-
2.4
5
-
450
-
0.16
-
Unit
V
V
μA
A
nA
S
Ω
pF
BLF6G27-100_BLF6G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2010
3 of 14
NXP Semiconductors
BLF6G27-100; BLF6G27LS-100
WiMAX power LDMOS transistor
7. Application information
Table 7.
Application information
Mode of operation: 1-carrier W-CDMA; single carrier W-CDMA TM1 with 64 DPCH and 100 %
clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; carrier channel bandwidth is 3.84 MHz;
f
1
= 2500 MHz; f
2
= 2600 MHz, f
3
= 2700 MHz; RF performance at V
DS
= 28 V; I
Dq
= 900 mA;
T
case
= 25
°
C; unless otherwise specified, in a class-AB production circuit.
Symbol
G
p
Parameter
power gain
Conditions
P
L(AV)
= 14 W
BLF6G27-100
BLF6G27LS-100
RL
in
η
D
ACPR
5M
input return loss
drain efficiency
adjacent channel power ratio
(5 MHz)
P
L(AV)
= 14 W
P
L(AV)
= 14 W
P
L(AV)
= 14 W
BLF6G27-100
BLF6G27LS-100
ACPR
10M
adjacent channel power ratio
(10 MHz)
P
L(AV)
= 14 W
BLF6G27-100
BLF6G27LS-100
[1]
ACPR measured in 3.84 MHz channel bandwidth at
±5
MHz and
±10
MHz.
[1]
[1]
Min
Typ
Max Unit
dB
dB
dB
%
dBc
dBc
dBc
dBc
14.8 16.5 -
15
-
20
-
-
-
-
17
−10
23
−40
−41
−59
−60
-
−6
-
−36
−37
−56
−57
7.1 Ruggedness in class-AB operation
The BLF6G27-100 and BLF6G27LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 900 mA; P
L
= 100 W (CW); f = 2500 MHz.
BLF6G27-100_BLF6G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2010
4 of 14
NXP Semiconductors
BLF6G27-100; BLF6G27LS-100
WiMAX power LDMOS transistor
7.2 Single carrier W-CDMA performance
19
G
p
(dB)
18
G
p
17
(1)
(2)
(2)
(3)
(1)
001aal779
50
η
D
(%)
40
−20
ACPR
(dBc)
−30
(3)
(2)
(1)
001aal780
30
−40
16
(3)
20
−50
ACPR
5M
(3)
(2)
(1)
15
η
D
10
−60
ACPR
10M
14
1
10
P
L(AV)
(W)
0
10
2
−70
1
10
P
L(AV)
(W)
10
2
V
DS
= 28 V; I
Dq
= 900 mA; single carrier W-CDMA TM1
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at
0.01 % probability; channel bandwidth = 3.84 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 900 mA; single carrier W-CDMA TM1
with 64 DPCH and 100 % clipping; PAR = 9.65 dB at
0.01 % probability; channel bandwidth = 3.84 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 1.
Power gain and drain efficiency as a function
of average output power; typical values
Fig 2.
ACPR at 5 MHz and at 10 MHz as a function of
average output power; typical values
BLF6G27-100_BLF6G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2010
5 of 14
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