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BA892H6770XTSA1

Description
DIODE RF SW 35V 100MA SCD80
CategoryDiscrete semiconductor    diode   
File Size967KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BA892H6770XTSA1 Overview

DIODE RF SW 35V 100MA SCD80

BA892H6770XTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance1.4 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BA592/BA892...
Silicon RF Switching Diode
For band switching in TV/VTR tuners
and mobile applications
Very low forward resistance (typ. 0.45
@ 3 mA)
Small capacitance
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BA592
BA892/-02L
BA892-02V

Type
BA592
BA892
BA892-02L
BA892-02V
Package
SOD323
SCD80
TSLP-2-1
SC79
Configuration
single
single
single, leadless
single
L
S
(nH)
1.8
0.6
0.4
0.6
Marking
blue S
AA
AA
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Symbol
V
R
I
F
T
J
T
op
T
Stg
Value
35
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1
2011-07-21
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