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BAT1504RE6327HTSA1

Description
DIODE SCHOTTKY 4V 110MA SOT23
CategoryDiscrete semiconductor    diode   
File Size578KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BAT1504RE6327HTSA1 Overview

DIODE SCHOTTKY 4V 110MA SOT23

BAT1504RE6327HTSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance0.25 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandX BAND
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Schottky barrier typeLOW BARRIER
Base Number Matches1
BAT15-04R*
Silicon RF Schottky Diodes
Low barrier type for mixer applications
up to 12 GHz, phase detectors and modulators
Pb-free (RoHS compliant) package
BAT15-04R
3
D1
D2
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BAT15-04R*
Package
SOT 23
Configuration
reverse series pair
L
S
(nH)
1.5
Marking
4R
*preliminary
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Symbol
V
R
I
F
T
j
T
op
T
stg
Value
4
110
150
-55 ... 150
-65 ... 150
Unit
V
mA
°C
1
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