SKB15N60HS
High Speed IGBT in NPT-technology
C
•
30% lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for operation above 30 kHz
•
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
•
•
•
•
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
1
Qualified according to JEDEC for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
I
C
15A
E
off
200µJ
T
j
150°C
Marking
K15N60HS
Package
PG-TO263-3-2
PG-TO263-3-2
G
E
Type
SKB15N60HS
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Symbol
V
CE
I
C
Value
600
27
15
Unit
V
A
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage static
transient (t
p
<1µs,
D<0.05)
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Time limited operating junction temperature for
t
< 150h
Soldering temperature (reflow soldering, MSL1)
2)
I
Cpul s
-
I
F
60
60
40
20
I
Fpul s
V
GE
t
SC
P
tot
T
j
,
T
stg
T
j(tl)
-
80
±20
±30
10
138
-55...+150
175
245
V
µs
W
°C
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev 2.3
Oct. 07
Power Semiconductors
SKB15N60HS
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Symbol
R
thJC
R
thJCD
R
thJA
R
thJA
Conditions
Max. Value
0.9
1.7
62
40
Unit
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 15 A
T
j
=2 5
°C
T
j
=1 5 0° C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 1 5 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 40 0
µA
,
V
C E
=
V
G E
V
C E
= 60 0 V,
V
G E
= 0 V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 15 A
-
-
-
-
-
-
-
10
40
2000
100
nA
S
-
3
1.5
1.5
4
2.0
2.0
5
µA
2.8
3.5
3.15
4.00
600
-
-
V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
1)
2
Power Semiconductors
2
Rev 2.3
Oct. 07
SKB15N60HS
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=1 5 A
V
G E
= 15 V
-
-
-
-
-
810
123
51
80
7
135
pF
nC
nH
A
V
G E
= 15 V ,t
S C
≤
10
µs
V
C C
≤
4 0 0 V,
T
j
≤
1 5 0° C
-
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
°C
,
V
R
= 4 00 V ,
I
F
= 1 5 A,
d i
F
/ d t
=9 8 0 A/
µs
-
-
-
-
-
-
111
27
83
580
14
520
nC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 40 0 V,
I
C
= 1 5 A,
V
G E
= 0/ 15 V ,
R
G
= 23
Ω
2)
L
σ
= 60 n H,
2)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
13
14
209
15
0.32
0.21
0.53
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to test circuit in Figure E.
3
Rev 2.3
Oct. 07
Power Semiconductors
SKB15N60HS
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 5 0° C
V
R
= 4 00 V ,
I
F
= 1 5 A,
d i
F
/ d t
=1 0 70 A /
µs
-
-
-
-
-
-
184
30
155
1320
18
360
nC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 40 0 V,
I
C
= 1 5 A,
V
G E
= 0/ 15 V ,
R
G
= 3 .6
Ω
1)
L
σ
= 60 n H,
1)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
T
j
=1 5 0° C
V
C C
= 40 0 V,
I
C
= 1 5 A,
V
G E
= 0/ 15 V ,
R
G
= 2 3Ω
1)
L
σ
= 60 n H,
1)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
11
6
72
26
0.38
0.20
0.58
12
15
235
17
0.48
0.30
0.78
mJ
ns
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to test circuit in Figure E.
Power Semiconductors
4
Rev 2.3
Oct. 07
SKB15N60HS
t
P
=5µs
60A
8µs
I
C
,
COLLECTOR CURRENT
50A
40A
30A
20A
10A
0A
10Hz
I
C
,
COLLECTOR CURRENT
T
C
=80°C
15µs
10A
50µs
200µs
1A
1ms
T
C
=110°C
I
c
I
c
0,1A
1V
DC
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 23Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤150°C;V
GE
=15V)
140W
120W
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
100W
80W
60W
40W
20W
0W
25°C
20A
10A
50°C
75°C
100°C
125°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
5
Rev 2.3
Oct. 07
京公网安备 11010802033920号
EEWORLD
