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1N4934-A

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size39KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

1N4934-A Overview

1 A, 50 V, SILICON, SIGNAL DIODE

1N4934-A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHERMETIC SEALED PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.2000 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
1N4933 - 1N4937
1.0A FAST RECOVERY RECTIFIER
Please click here to visit our online spice models database.
Features
Diffused Junction
Fast Switching for High Efficiency
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-
STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Ordering Information: See Page 2
Marking: Type Number
0.35 grams (approximate)
Dim
DO-41 Plastic
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @ T
A
= 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage Drop @ I
F
= 1.0A
Peak Reverse Current @T
A
= 25°C
at Rated DC Blocking Voltage (Note 5) @ T
A
= 100°C
Reverse Recovery Time (Note 3)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
θ
JA
T
J,
T
STG
1N4933
50
35
1N4934
100
70
1N4935
200
140
1.0
30
1.2
5.0
100
200
15
100
-65 to +150
1N4936
400
280
1N4937
600
420
Unit
V
V
A
A
V
μA
ns
pF
°C/W
°C
Leads maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Measured with I
F
= 0.5A, I
R
= 1A, I
rr
= 0.25A.
EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
Short duration pulse test used to minimize self-heating effect.
DS26002 Rev. 7 - 2
1 of 2
www.diodes.com
1N4933-1N4937
© Diodes Incorporated
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