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1N4004G-T3

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size48KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

1N4004G-T3 Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

1N4004G-T3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
WTE
POWER SEMICONDUCTORS
1N4001G – 1N4007G
Pb
1.0A GLASS PASSIVATED STANDARD DIODE
Features
!
!
!
!
!
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim
Min
Max
25.4
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
4001G
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N
4002G
100
70
1N
4003G
200
140
1N
4004G
400
280
1.0
1N
4005G
600
420
1N
4006G
800
560
1N
4007G
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
30
1.0
5.0
50
8.0
50
-65 to +175
-65 to +175
A
V
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N4001G – 1N4007G
1 of 4
© 2006 Won-Top Electronics
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