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UF4002 TR

Description
DIODE GEN PURP 100V 1A DO41
Categorysemiconductor    Discrete semiconductor   
File Size249KB,4 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

UF4002 TR Overview

DIODE GEN PURP 100V 1A DO41

UF4002 TR Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)50ns
Current at different Vr - Reverse leakage current10µA @ 100V
Capacitance at different Vr, F20pF @ 4V,1MHz
Installation typeThrough hole
Package/casingDO-204AL, DO-41, axial
Supplier device packagingDO-41
Operating Temperature - Junction-65°C ~ 150°C
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