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PMV27UPER

Description
MOSFET P-CH 20V 4.5A SOT23
CategoryDiscrete semiconductor    The transistor   
File Size853KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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PMV27UPER Overview

MOSFET P-CH 20V 4.5A SOT23

PMV27UPER Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeTO-236
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompliant
Factory Lead Time4 weeks
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance0.032 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PMV27UPE
15 May 2014
20 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability: P
tot
= 980 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
3. Applications
LED driver
Power management
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; I
D
= -4.5 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
-20
8
-5.6
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
27
32
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .

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PMV27UPER 934068498215
Description MOSFET P-CH 20V 4.5A SOT23 MOSFET P-CH 20V 4.5A
Maker Nexperia Nexperia
Reach Compliance Code compliant compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (ID) 4.5 A 4.5 A
Maximum drain-source on-resistance 0.032 Ω 0.032 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Guideline AEC-Q101; IEC-60134 IEC-60134
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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