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NVD6828NLT4G-VF01

Description
MOSFET N-CH 90V 38A DPAK
CategoryDiscrete semiconductor    The transistor   
File Size114KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NVD6828NLT4G-VF01 Overview

MOSFET N-CH 90V 38A DPAK

NVD6828NLT4G-VF01 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionSMALL OUTLINE, R-PSSO-G2
Manufacturer packaging code369AA
Reach Compliance Codecompliant
Factory Lead Time43 weeks 1 day
Avalanche Energy Efficiency Rating (Eas)90 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage90 V
Maximum drain current (Abs) (ID)41 A
Maximum drain current (ID)41 A
Maximum drain-source on-resistance0.025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)83 W
Maximum pulsed drain current (IDM)206 A
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
NVD6828NL
Power MOSFET
Features
90 V, 20 mW, 41 A, Single N−Channel
Low R
DS(on)
to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1 & 3)
Power Dissipation R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1,
2 & 3)
Power Dissipation R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
90
"20
41
29
83
42
8.7
6.1
3.8
1.9
206
−55
to
175
40
90
A
°C
A
mJ
AYWW
68
28LG
W
A
1 2
W
S
4
Unit
V
V
A
G
N−Channel
www.onsemi.com
V
(BR)DSS
90 V
R
DS(on)
20 mW @ 10 V
25 mW @ 4.5 V
D
I
D
41 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
3
DPAK
CASE 369C
STYLE 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L(pk)
= 24.5 A,
L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
Steady State (Drain)
Junction−to−Ambient
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.8
40
Unit
°C/W
2
1 Drain 3
Gate Source
A
= Assembly Location*
Y
= Year
WW
= Work Week
6828L = Device Code
G
= Pb−Free Package
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
ORDERING INFORMATION
Device
NVD6828NLT4G
Package
DPAK
(Pb−Free)
Shipping
2500/Tape & Reel
2500/Tape & Reel
DPAK
NVD6828NLT4G−
(Pb−Free)
VF01
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2017
Rev. 2
1
Publication Order Number:
NVD6828NL/D
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