DMP2075UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
-20V
R
DS(ON)
Max
75mΩ @ V
GS
= -4.5V
137mΩ @ V
GS
= -2.5V
I
D
Max
T
A
= +25°
C
-3.8A
-3.0A
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ADVANCED INFORMATION
Description
This MOSFET is designed to minimize on-state resistance (R
DS(ON)
)
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable per
MIL-STD-202, Method 208
e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6 (Type B)
S2
D2
D1
D2
G1
S1
Pin1
Bottom View
G2
D1
Q2 P-CHANNEL MOSFET
Q1 P-CHANNEL MOSFET
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMP2075UFDB
-7
DMP2075UFDB
-13
Notes:
Case
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
U-DFN2020-6 (Type B)
O3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
N4
O3
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
2018
F
Feb
2
Mar
3
2019
G
Apr
4
YM
2020
H
May
5
2021
I
Jun
6
Jul
7
2022
J
Aug
8
2023
K
Sep
9
Oct
O
2024
L
Nov
N
2025
M
Dec
D
May 2018
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 4 - 2
1 of 7
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DMP2075UFDB
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
AS
E
AS
Value
-20
±8
-3.8
-3.0
-1.0
-25
-13
8.5
Unit
V
V
A
A
A
A
mJ
ADVANCED INFORMATION
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°
C
Steady State
T
A
= +25°
C
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.7
178
1.4
92
22
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-20
—
—
-0.35
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
53
64
-0.7
642
98
87
26.5
8.8
15
0.9
2.9
5.5
22.6
34.1
34.3
13
3.3
Max
—
-1.0
±10
-1.4
75
137
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
I
S
= -3.0A, dI/dt = 100A/μs
I
S
= -3.0A, dI/dt = 100A/μs
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 3.3Ω, R
g
= 1Ω
V
DS
= -10V, I
D
= -3.7A
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±6.4V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.5V, I
D
= -2.3A
V
GS
= 0V, I
S
= -3.0A
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
5. Device mounted on on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP2075UFDB
Document number: DS40150 Rev. 4 - 2
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May 2018
© Diodes Incorporated
DMP2075UFDB
20
V
GS
= -8V
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -3.0V
V
GS
= -2.0V
10
V
DS
= -5.0V
8
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
15
ADVANCED INFORMATION
6
T
J
= 150°
C
10
4
T
J
= 125°
C
T
J
= 85°
C
T
J
= 25°
C
T
J
= -55°
C
V
GS
= -1.5V
5
V
GS
= -1.2V
V
GS
= -1.0V
2
00
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (m)
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (m)
150
500
450
400
350
300
250
200
150
100
50
0
0
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1
8
I
D
= -2.3A
I
D
= -2.9A
120
90
V
GS
= -2.5V
60
V
GS
= -4.5V
30
0
0
5
10
15
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= -4.5V
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (m)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
80
2
1.8
T
J
= 150°
C
T
J
= 125°
C
R
D S(ON )
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
70
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
V
GS
= -4.5V
I
D
= -2.9A
V
GS
= -2.5V
I
D
= -2.3A
60
T
J
= 85°
C
T
J
= 25°
C
50
T
J
= -55°
C
40
30
20
0
5
10
15
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
20
DMP2075UFDB
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DMP2075UFDB
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (m)
ON-RESISTANCE (
)
DS(ON)
90
80
V
GS
= -2.5V
0.8
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
h
V
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
70
60
50
40
30
20
10
0
-50
I
D
= -2.5A
0.6
I
D
= -1mA
ADVANCED INFORMATION
V
GS
= -4.5V
I
D
= -2.9A
0.4
I
D
= -250µA
0.2
t
(
S
G
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
0
-50
20
10000
f=1MHz
I
S
, SOURCE CURRENT (A)
15
C
T
, JUNCTION CAPACITANCE (pF)
1000
C
iss
10
T
J
= 150°
C
T
J
= 125°
C
T
J
= 85°
C
T
J
= 25°
C
T
J
= -55°
C
100
C
rss
C
oss
5
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
2
10
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
8
100
R
DS(ON)
Limited
V
V
GS
, GATE SOURCE VOLTAGE (V)
(V)
GS
GATE THRESHOLD VOLTAGE
I
D
= -4A
4
2
I
D
, DRAIN CURRENT (A)
6
V
DS
= -10V
10
)
A
(
T
N
E
R
R
DC
U
1
C
P
W
= 10s
N
I
A
P
W
= 1s
R
D
,
D
T
= 150°
P
W
= 100ms
C
0.1
J(MAX)
I
T
C
= 25°
C
V
GS
=- 4.5V
Single Pulse
DUT on 1 * MRP Board
P
W
= 10µs
P
W
= 10ms
P
W
= 1ms
0
0
2
4
6
8
10
12
14
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
16
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMP2075UFDB
Document number: DS40150 Rev. 4 - 2
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DMP2075UFDB
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCED INFORMATION
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
D = Single Pulse
R
JA
= 178°
C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
0.001
0.000001
0.00001
DMP2075UFDB
Document number: DS40150 Rev. 4 - 2
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