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MCCD2004-TP

Description
MOSFET 2N-CH 20V 10A
Categorysemiconductor    Discrete semiconductor   
File Size749KB,4 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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MCCD2004-TP Overview

MOSFET 2N-CH 20V 10A

MCCD2004-TP Parametric

Parameter NameAttribute value
FET type2 N channel (double) common drain
FET functionstandard
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C10A
Rds On (maximum value) when different Id, Vgs10 milliohms @ 8A, 10V
Vgs (th) (maximum value) when different Id1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)18.5nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value)1955pF @ 10V
Power - Max-
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing6-WFDFN Exposed Pad
Supplier device packagingDFN2030-6
MCC
Micro Commercial Components
R
  omponents
20736 Marilla Street Chatsworth

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MCCD2004
Features
Advanced trench MOSFET process technology
Halogen
free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:2004
Dual N-Channel
Power MOSFET
DFN2030-6
Unit
V
A
A
V
/W
D
C
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
DS
I
D
I
DM
V
GS
R
©
JA
Parameter
Drain-source Voltage
Drain Current-Continuous
Pulsed Drain Current
(note1)
Gate-source Voltage
Thermal Resistance Junction to Ambient
Rating
20
10
40
f
12
125
A
E
B
T
J
T
STG
Operating Junction Temperature
Storage Temperature
-55 to +150
-55 to +150
L
Notes:
1. Repetitive Rating: Pulse width limited by junction temperature.
.
J
F
Equivalent Circuit
G
K
H
Dimensions
INCHES
DIM
A
B
C
D
E
F
G
H
J
K
L
MM
MAX
.032
MIN
0.028
MIN
0.700
MAX
NOTE
0.008REF.
0000
0.002
0.077
0.116
0.055
0.063
0.008
0.008
0.018
0.081
0.120
0.063
0.071
0.012
---
0.026
0.800
0.203REF.
0.000
0.050
1.950
2.950
1.400
1.600
0.200
0.200
0.300
2.050
3.050
1.600
1.800
0.300
---
0.400
0.500TYP.
0.020TYP.
www.mccsemi.com
Revision:
A
1
of
4
2016/02/03

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