Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DF
N1
01
PMXB56EN
11 January 2017
0D
-3
30 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3
(SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
Very low Drain-Source on-state resistance R
DSon
= 49 mΩ
Very fast switching
3. Applications
•
•
•
•
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
V
GS
I
D
R
DSon
[1]
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
j
= 25 °C
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 3.2 A; T
j
= 25 °C
[1]
Min
-
-20
-
-
Typ
-
-
-
49
Max
30
20
3.2
55
2
Unit
V
V
A
mΩ
Static characteristics
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
Symbol Description
G
S
D
D
gate
source
drain
drain
2
Transparent top view
Simplified outline
1
4
3
Graphic symbol
D
G
S
017aaa253
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
PMXB56EN
Package
Name
DFN1010D-3
Description
DFN1010D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
Version
SOT1215
7. Marking
Table 4. Marking codes
Type number
PMXB56EN
READING
DIRECTION
Marking code
01 10 10
MARKING CODE
(EXAMPLE)
YEAR DATE
CODE
VENDOR CODE
PIN 1
INDICATION MARK
MARK-FREE AREA
READING EXAMPLE:
11
01
10
aaa-008041
Fig. 1.
DFN1010D-3 (SOT1215) binary marking code description
PMXB56EN
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2017. All rights reserved
Product data sheet
11 January 2017
2 / 15
NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
[1]
[2]
[2]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
Max
30
20
3.2
2.8
15
0.4
1.07
8.33
150
150
150
1
2
Unit
V
V
A
A
A
W
W
W
°C
°C
°C
A
junction temperature
ambient temperature
storage temperature
source current
T
amb
= 25 °C
[1]
Source-drain diode
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 2.
Normalized total power dissipation as a
function of junction temperature
Fig. 3.
Normalized continuous drain current as a
function of junction temperature
PMXB56EN
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2017. All rights reserved
Product data sheet
11 January 2017
3 / 15
NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
10
2
l
D
(A)
10
t
p
= 10 µs
aaa-009040
t
p
= 100 µs
1
t
p
= 1 ms
DC; T
amb
= 25 °C; 6 cm
2
10
-1
DC; T
sp
= 25 °C
t
p
= 10 ms
t
p
= 100 ms
10
-2
10
-1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
271
102
10
Max
312
117
15
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.5
0.25
0.1
0.02
10
0.01
aaa-008918
0.75
0.33
0.2
0.05
0
1
10
-3
10-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMXB56EN
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2017. All rights reserved
Product data sheet
11 January 2017
4 / 15
京公网安备 11010802033920号
EEWORLD
