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3SK292(TE85R,F)

Description
MOSFET N-CH 12.5 30MA SMQ
CategoryDiscrete semiconductor    The transistor   
File Size295KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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3SK292(TE85R,F) Overview

MOSFET N-CH 12.5 30MA SMQ

3SK292(TE85R,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage12.5 V
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)23.5 dB
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
3SK292
TOSHIBA Field Effect Transistor
Silicon N-Channel Dual Gate MOS Type
3SK292
TV Tuner, VHF RF Amplifier Application
Superior cross modulation performance.
Low reverse transfer capacitance: C
rss
= 20 fF (typ.)
Low noise figure: NF = 1.4dB (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
G1S
V
G2S
I
D
P
D
T
ch
T
stg
Rating
12.5
±8
±8
30
150
125
−55
to 125
Unit
V
V
V
mA
mW
°C
°C
SMQ
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3J1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 13 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
I
G1SS
I
G2SS
V
(BR) DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
⎪Y
fs
C
iss
C
rss
G
ps
NF
Test Condition
V
DS
=
0, V
G1S
= ±6
V, V
G2S
=
0
V
DS
=
0, V
G1S
=
0, V
G2S
= ±6
V
V
G1S
= −0.5
V, V
G2S
= −0.5
V,
I
D
=
100
μA
V
DS
=
6 V, V
G1S
=
0, V
G2S
=
4.5 V
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
100
μA
V
DS
=
6 V, V
G1S
=
4.0 V, I
D
=
100
μA
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
1 kHz
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
1 MHz
V
DS
=
6 V, V
G2S
=
4.5 V, I
D
=
10 mA,
f
=
500 MHz (Figure 1)
Min
12.5
0.3
0.5
19.5
23.5
Typ.
0.9
1.0
23.5
2.5
20
26.0
1.4
Max
±50
±50
0.1
1.3
1.5
3.1
40
2.5
Unit
nA
nA
V
mA
V
V
mS
pF
fF
dB
dB
Start of commercial production
1996-04
1
2014-03-01
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