Preliminary data
BSO207P
OptiMOS
-P Small-Signal-Transistor
Feature
•
Dual P-Channel
•
Enhancement mode
•
Super Logic Level (2.5 V rated)
•
150°C operating temperature
•
Avalanche rated
•
dv/dt rated
S1
G1
S2
G2
1
2
3
4
Top View
Product Summary
V
DS
R
DS(on)
I
D
8
7
6
5
-20
45
-5.7
V
mΩ
A
D1
D1
D2
D2
SIS00070
Type
BSO207P
Package
SO 8
Ordering Code
Q67042-S4068
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-5.7
-4.6
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
-22.8
44
-6
±12
2
-55... +150
55/150/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
I
D
=-5.7 A ,
V
DD
=-10V,
R
GS
=25Ω
Reverse diode dv/dt
I
S
=-5.7A,
V
DS
=-16V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2001-11-20
Preliminary data
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint, t < 10s
@ 6 cm
2
cooling area
1)
BSO207P
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
-
-
max.
50
110
62.5
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-20
-0.6
Values
typ.
-
-0.9
max.
-
-1.2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-40µA
Zero gate voltage drain current
V
DS
=-20V,
V
GS
=0,
T
j
=25°C
V
DS
=-20V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
47
32
-1
-100
-100
70
45
nA
mΩ
Gate-source leakage current
V
GS
=-12V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-2.5V,
I
D
=-4.7A
Drain-source on-state resistance
V
GS
=-4.5,
I
D
=-5.7A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t
≤10
sec.
Page 2
2001-11-20
Preliminary data
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-10V,
V
GS
=-4.5V,
I
D
=-1A,
R
G
=6Ω
çV
DS
ç≥2*çI
D
ç*R
DS(on)max
I
D
=-4.6A
V
GS
=0,
V
DS
=-15V,
f=1MHz
BSO207P
Symbol
Conditions
min.
8
-
-
-
-
-
-
-
Values
typ.
16
1013
388
318
9
17
40
49
max.
-
-
-
-
13.5
25
60
65
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0, |I
F
| = |I
D
|
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-15V,
I
D
=-5.7A
-
-
-
-
-1.8
-7.3
-15.6
-1.7
-2.7
-11
-23.4
-
nC
V
DD
=-15V,
I
D
=-5.7A,
V
GS
=0 to -4.5V
V
(plateau)
V
DD
=-15V,
I
D
=-5.7A
V
I
S
I
SM
T
A
=25°C
-
-
-
-
-
-
-
-0.88
29
12.3
-2.2
-22.8
A
-1.32 V
36
15.4
ns
nC
Page 3
2001-11-20
Preliminary data
1 Power dissipation
P
tot
=
f
(T
A
)
2.6
BSO207P
BSO207P
2 Drain current
I
D
=
f
(T
A
)
parameter: |V
GS
|≥ 4.5 V
-6.5
BSO207P
W
2.2
2
1.8
A
-5.5
-5
-4.5
P
tot
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
I
D
°C
160
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0
20
40
60
80
100
120
°C
160
T
C
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
2
BSO207P
4 Transient thermal impedance
Z
thJS
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSO207P
K/W
A
=
V
D
S
)
on
/
I
D
t
p = 57.0µs
100 µs
1 ms
10
1
-10
1
R
D
S(
Z
thJS
10
0
I
D
10 ms
-10
0
10
-1
D = 0.50
0.20
10
-2
0.10
0.05
DC
10
-3
-10
-1
single pulse
0.02
0.01
-10
-2 -1
-10
-10
0
-10
1
V
-10
2
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Page 4
t
p
2001-11-20
Preliminary data
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
BSO207P
BSO207P
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
BSO207P
-14
A
-12
-11
-10
P
tot
= 2W
i
V
GS [V]
a
-1.8
150
mΩ
c
d
e
f
g
h
g
b
c
d
-1.9
120
R
DS(on)
-2.0
-2.1
-2.2
-2.3
-2.4
-2.5
-4.5
110
100
90
80
70
60
h
I
D
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-0.5
-1
-1.5
-2
-2.5 -3
a
c
e
f
e
f
g
h
i
d
50
40
i
30
b
20
V
GS
[V] =
10
c
d
e
f
-2.0 -2.1 -2.2 -2.3
g
h
i
-2.4 -2.5 -4.5
-3.5 -4
V
-5
0
0
-2
-4
-6
-8
-10
A
-13
V
DS
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS
|≥ 2 x |I
D
| x
R
DS(on)max
parameter:
t
p
= 80 µs
35
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
t
p = 80 µs
35
A
S
25
25
-
I
D
20
g
fs
20
15
15
10
10
5
5
0
0
0.5
1
1.5
2
3
0
0
V
5
10
15
20
25
A
-
I
D
35
-
V
GS
Page 5
2001-11-20
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