PHOTONIC
Silicon Photodiode, Filter Combination Photovoltaic
DETECTORS INC.
(center wavelength 436 nm) Type PDB-V443.6
PACKAGE DIMENSIONS INCH [mm]
EPOXY COVERING
EYELET
0.365 [9.27]
DIA
0.355 [9.02]
0.345 [8.76]
0.335 [8.51]
0.245 [6.22]
DIA
0.235 [5.97]
EPOXY MARKING INK (WAVE LENGTH NO.)
ACTIVE AREA SURFACE
+ 0.005 [0.13]
-
0.080 [2.03]
0.200 [5.08] DIA
PIN CIRCLE
0.500 [12.70]
45°
ANODE
WIRE
BONDS
CHIP
0.330 [8.38]
DIA
0.320 [8.13]
FILTER CAP
SUBASSEMBLY
ACTIVE AREA
0.223 [5.66]
0.135 [3.43]
0.123 [3.12]
ACTIVE AREA
0.235 [5.97]
0.020 [0.51] DIA
2 PLACES
0.035 [0.89]
0.030 [0.76]
0.425 [10.80]
0.415 [10.54]
CATHODE
(CASE GROUND)
HEADER
TO-5 CAN PACKAGE
ACTIVE AREA = 17.74 mm
2
FEATURES
436 +/- 2 nm CWL
10 nm FWHM
45% transmission
10
-4
rejection
DESCRIPTION
The
PDB-V443.6
is a silicon, PIN planar diffused,
photodiode with a narrow band interference filter.
The detector filter combination has a narrow 10 nm
half bandwidth designed for low noise photovoltaic
applications. Packaged in a TO-5 metal can.
RESPONSIVITY (A/W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
APPLICATIONS
Spectrophotometry
Chemistry instrumentation
Liquid chromatography
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
V
BR
T
STG
T
O
T
S
I
L
Reverse Voltage
Storage Temperature
Operating Temperature Range
Soldering Temperature*
Light Current
-20
-15
100
+85
+70
+240
500
V
O
O
O
SPECTRAL RESPONSE
%
00
=1
QE
C
C
C
FWHM = 10 nm
@ 45% Tx MIN
190
300
400
500
600
700
800
900
1000
1100
1200
mA
*1/16 inch from case for 3 secs max
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
I
SC
I
D
R
SH
TC R
SH
C
J
CWL
HBW
V
BR
NEP
tr
Short Circuit Current***
Dark Current
Shunt Resistance
R
SH
Temp. Coefficient
Junction Capacitance
Center Wavelength
Half Bandwidth
Breakdown Voltage
Noise Equivalent Power
Response Time
H = 100 fc, 2850 K
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 V**
(CWL,
l
o) +/- 2 nm
(FWHM)
I = 10
m
A
V
R
= 10 mV @ Peak
RL = 1 KΩ V
R
= 10 V
50
.20
150
200
10
2
-8
1700
436
10
75
9x10
-15
1.0
MAX
50
UNITS
m
A
pA
G
Ω
% /
o
C
pF
nm
nm
V
W/
Hz
µ
S
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice.**f = 1 MHz, ***without filter
[FORM NO. 100-PDB-V443.6 REV N/C]
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EEWORLD
