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ABS8HREG

Description
BRIDGE RECT 1P 800V 800MA ABS
Categorysemiconductor    Discrete semiconductor   
File Size209KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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ABS8HREG Overview

BRIDGE RECT 1P 800V 800MA ABS

ABS8HREG Parametric

Parameter NameAttribute value
Diode typeSimplex
technologystandard
Voltage - Peak Reverse (Maximum)800V
Current - average rectification (Io)800mA
Voltage at different If - Forward (Vf950mV @ 400mA
Current at different Vr - Reverse leakage current10µA @ 800V
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing4-SMD, gull wing
Supplier device packagingABS
ABS2 - ABS10
Taiwan Semiconductor
CREAT BY ART
1A, 200V - 1000V Glass Passivated Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ABS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
On glass-epoxy
On aluminum substrate
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 0.4 A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
ABS2
200
140
200
ABS4
400
280
400
ABS6
600
420
600
0.8
1.0
30
3.74
0.95
10
150
25
80
- 55 to +150
- 55 to +150
ABS8
800
560
800
ABS10
1000
700
1000
Unit
V
V
V
A
I
FSM
I
2
t
V
F
I
R
R
θJL
R
θJA
T
J
T
STG
A
A
2
s
V
μA
°C/W
°C
°C
Document Number: DS_D1410049
Version: L15

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