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BAV70W/MIF

Description
SWITCHING DIODE
Categorysemiconductor    Discrete semiconductor   
File Size863KB,16 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

BAV70W/MIF Overview

SWITCHING DIODE

BAV70W/MIF Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io) (per diode)175mA(DC)
Voltage at different If - Forward (Vf1.25V @ 150mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)4ns
Current at different Vr - Reverse leakage current500nA @ 80V
Operating Temperature - Junction150°C (maximum)
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingSC-70
BAV70 series
High-speed switching diodes
Rev. 8 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
Nexperia
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
SOT23
SOT883
SOT363
SOT416
SOT323
JEITA
-
SC-101
SC-88
SC-75
SC-70
JEDEC
-
-
-
-
Package
configuration
Configuration
dual common cathode
dual common cathode
quadruple common
cathode/common cathode
dual common cathode
dual common cathode
Type number
TO-236AB small
leadless ultra
small
very small
ultra small
very small
1.2 Features and benefits
High switching speed: t
rr
4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: C
d
1.5 pF
Reverse voltage: V
R
100 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
100
4
Unit
A
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
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