Data Sheet
BCR5FM-14LJ
700V - 5A - Triac
Medium Power Use
Features
•
•
•
•
I
T (RMS)
: 5 A
V
DRM
: 800 V (Tj=125C)
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA
•
Insulated Type
•
Planar Passivation Type
•
Viso: 2000V
R07DS0961EJ0200
Rev.2.00
Jul. 7, 2017
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
1 2
3
Application
Power supply, motor control, heater control, solid state relay, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Isolation voltage
Note5
Notes: 1. Gate open.
Note1
Symbol
V
DRM
V
DSM
Ratings
5
50
10.4
5
0.5
10
2
–40
to +150
–40
to +150
2000
Voltage class
14
800
700
840
Unit
A
A
A
2
s
W
W
V
A
C
C
V
Unit
V
V
V
Conditions
Tj=125C
Tj=150C
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
V
iso
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 113C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Ta=25C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
R07DS0961EJ0200 Rev.2.00
Jul. 7, 2017
Page 1 of 8
BCR5FM-14LJ
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
Notes: 2.
3.
4.
5.
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
0.1
—
5
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.8
1.5
1.5
1.5
30
30
30
—
—
4.9
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
V
C/W
V/s
V/s
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Tj = 150C
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 7 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th(c-f)
in case of greasing is 0.5C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c =
–2.5
A/ms
3. Peak off-state voltage
V
D
= 400 V
Time
(di/dt)c
Time
Time
V
D
R07DS0961EJ0200 Rev.2.00
Jul. 7, 2017
Page 2 of 8
BCR5FM-14LJ
Data Sheet
Performance Curves
Maximum On-State Characteristics
10
2
100
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
80
10
1
Tj = 150 C
60
40
20
10
0
Tj = 25 C
10
- 1
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
Gate Voltage (V)
10
1
V
GM
= 10V P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
V
GT
= 1.5V
10
0
Gate Trigger Current (Tj = t C)
100 (%)
Gate Trigger Current (Tj = 25 C)
Gate Characteristics (I, II and III)
10
2
I
FGT I
I
RGT I
I
RGT III
10
1
- 40
10
- 1
I
RGT I
I
FGT I
, I
RGT III
10
2
V
GD
= 0.1V
10
3
10
4
10
1
0
40
80
120
160
Gate Current (mA)
Junction Temperature ( C)
100 (%)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance ( C/W)
10
2
6
5
10
3
10
4
Gate Trigger Voltage (Tj = t C)
Gate Trigger Voltage (Tj = 25 C)
4
3
2
1
0
-1
10
10
2
10
1
- 40
0
40
80
120
160
10
0
10
1
10
2
Junction Temperature ( C)
Conduction Time (Cycles at 60Hz)
R07DS0961EJ0200 Rev.2.00
Jul. 7, 2017
Page 3 of 8
BCR5FM-14LJ
Data Sheet
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
8
Transient Thermal Impedance (°C/W)
10
3
On-State Power Dissipation (W)
No Fins
7
6
5
4
3
2
10
2
10
1
10
0
1
0
0
1
2
3
4
360° Conduction
Resistive,
inductive loads
5
6
7
8
10
- 1
10
1
10
2
10
3
10
4
10
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
Ambient Temperature (°C)
Case Temperature (°C)
140
120
100
80
60
40
140
120
100
80
60
120
×120 ×t2.3
100
×100 ×t2.3
60
×60 ×t2.3
360° Conduction
20 Resistive,
inductive loads
0
0
1
2
3
4
40
Curves apply regardless
20
0
0
of conduction angle
Resistive, inductive loads
Natural convection
All fins are
black painted
aluminum
and greased
5
6
7
8
1
2
3
4
5
6
7
8
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×100
(%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
10
5
Ambient Temperature (°C)
140
120
100
80
60
40
10
4
10
3
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
10
2
- 40
0
40
80
120
160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0961EJ0200 Rev.2.00
Jul. 7, 2017
Page 4 of 8
BCR5FM-14LJ
Data Sheet
Holding Current vs.
Junction Temperature
10
2
Latching Current vs.
Junction Temperature
10
3
Distribution
Typical Example
Latching Current (mA)
Holding Current (mA)
III Quadrant
Distribution
10
2
T
2
+, G-
Typical Example
10
1
10
1
T
2
+, G+
Typical Example
T
2
- , G-
0
40
80
120
160
I Quadrant
V
D
=12V
10
0
- 40
0
40
80
120
160
10
0
- 40
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
60
40
20
0
1
10
Typical Example
Tj = 125°C
I Quadrant
160
140
120
100
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
III Quadrant
80
60
40
20
Typical Example
0
40
80
120
160
0
- 40
10
2
10
3
10
4
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20 Typical Example
Tj = 150°C
0
1
10
10
2
I Quadrant
III Quadrant
Rate of Rise of Off-State Voltage (V/s)
Breakover Voltage (dv/dt = xV/s)
×
100 (%)
Breakover Voltage (dv/dt = 1V/s)
Commutation Characteristics (Tj=125°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/s)
Typical Example
Time
Main Voltage
(dv/dt)c
V
D
Tj = 125°C
Main Current
I =4A
(di/dt)c
T
I
T
t = 500
s
t
Time
V = 200 V
f = 3 Hz
D
10
1
Minimum
Value
III Quadrant
I Quadrant
10
0
10
0
10
1
10
2
10
3
10
3
10
4
Rate of Rise of Off-State Voltage (V/s)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0961EJ0200 Rev.2.00
Jul. 7, 2017
Page 5 of 8
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