Preliminary
Datasheet
BCR5CM-12RA
600V - 5A - Triac
Medium Power Use
Features
•
I
T(RMS)
: 5 A
•
V
DRM
: 600 V
•
I
FGT I
, I
RGT I
, I
RGT III
: 15 mA (10 mA)
Note6
•
Non-Insulated Type
•
Planar Passivation Type
R07DS1149EJ0100
Rev.1.00
Jan 23, 2014
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
3
1
1
2
3
Applications
Electric rice cooker, electric pot, and controller for other heater
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Symbol
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Ratings
5
50
10.4
3
0.3
10
2
– 40 to +125
– 40 to +125
2.1
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 103°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Unit
V
V
Typical value
R07DS1149EJ0100 Rev.1.00
Jan 23, 2014
Page 1 of 6
BCR5CM-12RA
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
I
II
III
I
II
III
Symbol
I
DRM
V
TM
V
FGT
I
V
RGT
I
V
RGT
III
I
FGT
I
I
RGT
I
I
RGT
III
V
GD
R
th(j-c)
Min.
—
—
—
—
—
—
—
—
0.2
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.8
1.5
1.5
1.5
15
Note5
15
Note5
15
Note5
—
3.0
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 7 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C
V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T
2
tab 1.5 mm away from the molded case.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
High sensitivity (I
GT
≤
10 mA) is also available. (I
GT
item: 1)
R07DS1149EJ0100 Rev.1.00
Jan 23, 2014
Page 2 of 6
BCR5CM-12RA
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
3
2
Rated Surge On-State Current
100
Surge On-State Current (A)
7
5
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
10
1
7
5
3
2
Tj = 150°C
10
0
7
5
3
2
Tj = 25°C
10
–1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
V
GM
= 10V
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
Typical Example
I
RGT III
I
RGT I
Gate Voltage (V)
10
1
7
5
3
V
GT
= 1.5V
2
10
0
7
5
3
2
P
G(AV)
= 0.3W
P
GM
= 3W
I
GM
= 2A
10
2
7
5
3
2
I
FGT I
I
GT
= 15mA
10
1
7
5
3
2
10
–1
7
V
GD
= 0.2V
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
0
–
60
–
40
–
20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–
60
–
40
–
20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2 3 5
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1149EJ0100 Rev.1.00
Jan 23, 2014
Page 3 of 6
BCR5CM-12RA
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
140
Maximum On-State Power Dissipation
8
On-State Power Dissipation (W)
7
6
360° Conduction
Resistive,
5
inductive loads
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Curves apply regardless
of conduction angle
Case Temperature (°C)
120
100
80
60
40
360° Conduction
20
Resistive,
inductive loads
0
0
1
2
3
4
5
6
7
8
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
120
100
80
Ambient Temperature (°C)
140
All fins are black painted
aluminum and greased
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
140
120
100
80
60
40
20
0
0
0.5
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
60
Curves apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural convection
0
1
2
3
4
0
5
6
7
8
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Holding Current vs.
Junction Temperature
10
2
7
5
4
3
2
10
1
7
5
4
3
2
10
0
–
60
–
40
–
20
0 20 40 60 80 100 120 140 160
Typical Example
V
D
= 12V
Distribution
Typical Example
10
5
10
4
10
3
10
2
–
60
–
40
–
20
0 20 40 60 80 100 120 140 160
Holding Current (mA)
Junction Temperature (°C)
Junction Temperature (°C)
R07DS1149EJ0100 Rev.1.00
Jan 23, 2014
Page 4 of 6
BCR5CM-12RA
Latching Current vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
10
3
160
140
120
100
80
60
40
20
–
60
–
40
–
20
Preliminary
Breakover Voltage vs.
Junction Temperature
Typical Example
Latching Current (mA)
7
5
3
2
T
2
+, G+
Typical Example
T
2
–, G–
Distribution
T
2
+, G–
Typical Example
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–
60
–
40
–
20
0 20 40 60 80 100 120 140 160
0
0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
7
5
4
3
I
RGT I
2
10
2
7
5
4
3
2
10
1 0
10
Typical Example
Tj = 125°C
Typical Example
I
RGT III
III Quadrant
I
FGT I
I Quadrant
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Rate of Rise of Off-State Voltage (V/μs)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
Test Procedure I
6Ω
Test Procedure II
6V
V
A
330Ω
Test Procedure III
R07DS1149EJ0100 Rev.1.00
Jan 23, 2014
Page 5 of 6
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