Data Sheet
CR6CM-12B
600V - 6A - Thyristor
Medium Power Use
Features
•
I
T (AV)
: 6 A
•
V
DRM
: 600 V
•
I
GT
: 10 mA
•
Tj: 150°C
•
Non-insulated Type
•
Planar Passivation Type
R07DS0230EJ0400
Rev.4.00
Jul. 11, 2018
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
RENESAS Package code: PRSS0004AT-A
(Package name: TO-220ABA)
4
2, 4
1. Cathode
2. Anode
3. Gate
4. Anode
3
1
1
2
1
3
2
3
Application
Power supply, motor control, heater control and other general purpose applications.
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
Tj
Tstg
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Ratings
9.4
6
90
41
5
0.5
6
10
2
–40
to +150
–40
to +150
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
Voltage class
12
600
720
480
600
480
Conditions
Commercial frequency, sine half wave
180conduction, Tc = 121C
Note1
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
50 Hz, surge on-state current
Unit
V
V
V
V
V
R07DS0230EJ0400 Rev.4.00
Jul. 11, 2018
Page 1 of 8
CR6CM-12B
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-c)
Min.
—
—
—
—
—
—
0.2
0.1
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
15
—
Max.
2.0
5.0
2.0
5.0
1.7
1.0
—
—
10
—
2.5
Unit
mA
mA
mA
mA
V
V
V
V
mA
mA
C/W
Test conditions
Tj = 125C, V
RRM
applied
Tj = 150C, V
RRM
applied
Tj = 125C, V
DRM
applied
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 20 A,
instantaneous value
Tj = 25C, V
D
= 6 V, I
T
= 1A
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Tj = 25C, V
D
= 6 V, I
T
= 1A
Tj = 25C, V
D
= 12 V
Junction to case
Note1 Note2
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.
2. The contact thermal resistance R
th(c-f)
in case of greasing is 1.0C /W.
R07DS0230EJ0400 Rev.4.00
Jul. 11, 2018
Page 2 of 8
CR6CM-12B
Data Sheet
Performance Curves
Maximum On-State Characteristics
10
3
Rated Surge On-State Current
100
Tj = 125°C
Surge On-State Current (A)
1
2
3
4
5
On-State Current (A)
80
60
40
20
10
2
10
1
10
0
0
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 50Hz)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
10
1
V
FGM
= 6V
P
G(AV)
= 0.5W
P
GM
= 5W
V
GT
= 1V
10
0
I
GT
= 10 mA
I
FGM
= 2A
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics
Gate Voltage (V)
10
2
10
-1
V
GD
= 0.1V
10
1
10
2
10
3
10
1
- 40
0
40
80
120
160
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (ºC/W)
Typical Example
10
1
10
0
10
2
10
-1
10
1
- 40
0
40
80
120
160
10
10
-3
-2
10
-2
10
-1
10
0
10
1
Junction Temperature (°C)
Time (s)
R07DS0230EJ0400 Rev.4.00
Jul. 11, 2018
Page 3 of 8
CR6CM-12B
Data Sheet
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
160
140
180º
Maximum Average Power Dissipation
(Single-Phase Half Wave)
16
Average Power Dissipation (W)
Case Temperature (ºC)
14
12
120º
90º
60º
q
360º
Resistive,
inductive loads
2
4
6
8
10
12
q
360º
Resistive,
inductive loads
180º
120º
90º
120
100
80
60
40
20
0
10
8
6
4
2
0
0
q
= 30º
60º
q
= 30º
0
2
4
6
8
10
12
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
16
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
140
Average Power Dissipation (W)
14
12
10
8
6
4
q
= 30º
180º
120º
Case Temperature (ºC)
q
q
120
100
80
60
40
20
q
= 30º
2
4
60º
6
8
180º
120º
90º
360º
Resistive
loads
90º
60º
q
q
2
0
0
2
4
6
8
360º
Resistive loads
10
12
0
0
10
12
Average On-State Current (A)
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
160
140
Maximum Average Power Dissipation
(Rectangular Wave)
16
Average Power Dissipation (W)
14
12
10
8
6
4
2
0
0
2
4
6
q
360º
Resistive,
inductive loads
8
10
12
q
= 30º
Case Temperature (ºC)
90º
60º
DC
270º
180º
120º
120
100
80
60
40
20
0
0
Resistive,
inductive loads
q
360º
270º
DC
8
10
12
60º 180º
q
= 30º
2
4
90º
120º
6
Average On-State Current (A)
Average On-State Current (A)
R07DS0230EJ0400 Rev.4.00
Jul. 11, 2018
Page 4 of 8
CR6CM-12B
Data Sheet
Repetitive Peak Reverse Voltage (Tj = tºC)
100 (%)
Repetitive Peak Reverse Voltage (Tj = 25ºC)
×
Breakover Voltage vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
140
120
100
80
60
40
20
0
- 40
0
40
80
120
160
Typical Example
×
100 (%)
160
140
120
100
80
60
40
20
Typical Example
Breakover Voltage (Tj = 25ºC)
Breakover Voltage (Tj = tºC)
0
- 40
0
40
80
120
160
Junction Temperature (ºC)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
1
10
10
2
10
3
10
4
Junction Temperature (ºC)
×
100 (%)
Breakover Voltage (dv/dt = 1V/ms)
×
100 (%)
Breakover Voltage (dv/dt = 1V/ms)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
1
10
10
2
10
3
10
4
Typical Example
Tj = 125ºC
Typical Example
Tj = 150ºC
Breakover Voltage (dv/dt = vV/ms)
Rate of Rise of Off-State Voltage (V/ms)
Breakover Voltage (dv/dt = vV/ms)
Rate of Rise of Off-State Voltage (V/ms)
Turn-Off Time vs.
Junction Temperature
80
70
Typical Example
Holding Current vs.
Junction Temperature
Holding Current (Tj = tºC)
Holding Current (Tj = 25ºC)
×
100 (%)
10
3
Typical Example
Turn-Off Time (ms)
60
50
40
30
20
10
Distribution
I
T
= 6A, - di/dt = 5A/ms,
V
D
= 300V, dv/dt = 20V/ms
V
R
= 50V
20
40
60
80 100 120 140 160
10
2
10
1
- 40
0
40
80
120
160
0
0
Junction Temperature (ºC)
Junction Temperature (ºC)
R07DS0230EJ0400 Rev.4.00
Jul. 11, 2018
Page 5 of 8
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